Matched Pair of Toshiba Transistors
SILICON NPN EPITAXIAL PLANAR TYPE
2-30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS.
(LOW SUPPLY VOLTAGE USE)
- Specified 12.5V, 28MHz Characteristics
- Output Power : Po=100WPEP
- Power Gain : Gp=13dB
- Collector Efficiency : '7 C = 35% (Min.)
- Intermodulation Distortion : IMD= -24dB(Max.)
The following information applies only to the Toshiba 2SC2879 & 2SC2979A.
Early design Toshiba 2SC2879 do not have the small red dot on the package (lower right).
In contrast, the later “A” version has the dot to identify that it uses a
different insulator between the chip and the flange base.
The 2SC2879A meets all specifications on the Toshiba Data Sheet, however, we believe
the heat conductivity from chip to flange with the original 2SC2879 part is better.
Also, we found that the 2SC2879 had a bit higher Collector to Base breakdown voltage,
which would be of interest it the transistor was to be pushed beyond factory specs.
For More info see data sheet