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MRF151G-MOT RF Power Field-Effect Transistor, 300 W, 50 V, 175 MHz, N-Channel Broadband MOSFET, Motorola

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MRF151G-MOT RF Power Field-Effect Transistor, 300 W, 50 V, 175 MHz, N-Channel Broadband MOSFET, Motorola

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Quick Overview

MRF151G-MOT RF Power Field-Effect Transistor, 300 W, 50 V, 175 MHz, N-Channel Broadband MOSFET, MFR: Motorola

Details

MRF151G RF Power Field-Effect Transistor  300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Features
Guaranteed Performance at 175 MHz, 50 V:
• Output Power — 300 W
• Gain — 14 dB (16 dB Typ)
• Efficiency — 50%
• Low Thermal Resistance — 0.35°C/W
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability

Description and Applications
Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

Limited Supply

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