MRF160 The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V
Designed primarily for wideband large–signal output and driver from 30–500 MHz.
N–Channel enhancement mode MOSFET
• Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55% (typ.)
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
• 100% Tested for load mismatch at all phase angles with 30:1 VSWR
• Low Crss – 0.8 pF Typical at VDS = 28 V