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RD07MVS2 Transistor, Mitsubishi

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Quick Overview

RD07MVS2 Transistor, Mitsubishi

RD07MVS2 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz, 7W, MFR: Mitsubishi (MFR #: RD07MVS2-101)

Details

RD07MVS2 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz, 7W

MFR: Mitsubishi

 

DESCRIPTION
RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. This device has an internal monolithic zener
diode from gate to source for ESD protection.

FEATURES
High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz)
Integrated gate protection diode

APPLICATION
For output stage of high power amplifiers In VHF/UHF band mobile radio sets.

RoHS COMPLIANT
RD07MVS2-101,T112 is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)


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