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2SC2879-RFP Transistor, 12v, 120 watt pep, RFP (HG - Huagao)

2SC2879-RFP Transistor, 12v, 120 watt pep, RFP (HG - Huagao)

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Quick Overview

2SC2879-RFP Transistor, Silicon NPN, 12v, 120 watt pep, Flange Mount, MFR RFP (HG - Huagao)

Details

2SC2879-RFP Transistor, Silicon NPN, 12v, 120 watt pep, Flange Mount

MFR: RFP (HG - Huagao)

The new 2SC2879 HG transistor is specifically manufactured for RF PARTS Co., and is identified with our RFP Logo.  This is the closest copy of the venerable TOSHIBA 2SC2879.   In addition to the normal BETA TEST, RFP subjects each part to our Curve Tracer examination to verify junction insulation and leakage characteristics.   This is our Standard RFP Quality Control program instituted to weed out marginal parts that might cause problems during actual usage.  RF PARTS has had this 100% screening procedure in place since 1977.   A Value Added step that only RF PARTS can provide.  (Any transistors not making the grade are returned to HG to be sold to someone else?) 

Matched Transistors   2SC2879MP–RFP RF MATCHED

When two or more 2SC2879 are ordered, they will be with same BETA Test numbers. In addition to the 100% Quality Control screening and Beta Matching, RFPARTS tests each transistor for RF Output @28 Mhz.  Matched sets are selected based on RF PARTS testing to provide as identical parts of the highest quality as possible.  Transistors are selected into Matched Pairs, Matched Quads, Sets of 8, etc.

2-30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS.  (LOW SUPPLY VOLTAGE USE) 

  • Specified 12.5V, 28MHz Characteristics 
  • Output Power : Po= UP TO 120W PEP MAX

MADE IN CHINA

NOTE:  Please follow these guidelines when using this part:

  • MAX VOLTAGE 15.5v.  
  • Cannot mix this part with original Toshiba.  If replacing parts in circuit, you must replace all the parts with same manufacturer.

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