Search results for 'mrf'
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MRF1150M Motorola Microwave Pulse Power Transistor 1090 MHz 50vdc (NOS)
$39.91 -
MRF555 Motorola NPN Silicon RF Low Power Transistor 12.5 V 470 MHz 1.5 W (NOS)
$6.91 -
MRF455 M/A-COM NPN Silicon Power Transistor 60W 12.5V 14-30 MHz Matched Quad (4) (NOS)
$231.91 -
MRF586 Motorola RF & Microwave Discrete Low Power NPN Silicon Transistor (NOS)
$7.91Designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.
- Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA
- GU max= 12.5dB (typ) @ 300 MHz, 15v, 40mA
- |S21|2= 12.5dB (typ) @ 300 MHz, 15v, 40mA
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF586-MOT -
MRF1946A Motorola NPN Silicon Power Transistor Stud Mount 30 Watt 10 dB 12.5 Volt 175 MHz Matched Pair (2) (NOS)
$109.91Designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment.
- High Common Emitter Power Gain
- Specified 12.5 V, 175 MHz Performance: Output Power = 30 Watts, Power Gain = 10 dB, Efficiency = 60%
- Diffused Emitter Resistor Ballasting
- Characterized to 220 MHz
- Load Mismatch at High Line and Overdrive Conditions
New Old Stock * No longer available for export
MFR: Motorola
SKU: MFR1946A-MP -
MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V Matched Quad (4)
$439.91Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF422MQ-MA -
SM724 Polyfet RF Power VDMOS Transistor (Cross for MRF255) (NOS)
$102.91Silicon VDMOS transistor designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
60 Watts Single Ended
New Old Stock * No longer available for export
* This part is direct cross for MRF255 *
MFR: Polyfet RF Devices
SKU: SM724For more information go here
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MRF904 Microsemi RF & Microwave Discrete Low Power Transistor 500 MHz (NOS)
$2.91 -
MRF904 APT NPN Silicon RF & Microwave Discrete Low Power Transistor 450 MHz (NOS)
$2.91Designed primarily for use in High Gain, low noise general-purpose amplifiers.
- High Frequency, To-72 packaged,
- High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz
- Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz
- High FT - 4 GHz (typ) @ IC = 15 mAdc
New Old Stock * No longer available for export
MFR: APT
SKU: MRF904-APT -
MRF630 Microsemi RF Power Transistor NPN Silicon 12.5 V 470 MHz 3.0 W (NOS)
$9.91 -
MRF5943 Microsemi RF & Microwave Discrete Low Power Transistor (NOS)
$2.91 -
MRF5943G APT RF & Microwave Discrete Low Power Transistor (NOS)
$2.91 As low as: $2.62Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillator.
- Low Cost SO-8 Plastic Surface Mount Package
- S-Parameter Characterization
- Maximum Available Gain: 17dB @ 300MHz
New Old Stock * No longer available for export
MFR: Advanced Power Technology RF (APTRF)
SKU: MRF5943G-APT -
MRF5943C Microsem RF & Microwave Discrete Low Power Transistor (NOS)
$2.91 As low as: $2.62 -
MRF586 Microsemi RF & Microwave Discrete Low Power NPN Silicon Transistor (NOS)
$6.91Designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.
- Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA
- GU max= 12.5dB (typ) @ 300 MHz, 15v, 40mA
- |S21|2= 12.5dB (typ) @ 300 MHz, 15v, 40mA
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF586-MSC -
MRF581G Microsemi Transistor (NOS)
$3.91- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF581G-MSC -
MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)
$4.91Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 870 MHz Characteristics: Output Power = .5 W, Minimum Gain = 8.0 dB, Efficiency 50%
- Cost Effective Macro X Package
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF559-MSC -
MRF557 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)
$2.91 As low as: $2.62 -
MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)
$3.91 As low as: $2.62Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 870 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 8 dB, Efficiency 60% (Typ)
- Cost Effective PowerMacro Packa
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MRF: APT
SKU: MRF557-APT -
MRF553 Microsemi RF and Microwave Discrete Low Power Transistor 1.5 W 175 MHz 12.5 V (NOS)
$4.91 As low as: $4.43Designed primarily for wideband large signal stages in the VHF frequency range.
- Specified @ 12.5 V, 175 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 11.5 dB, Efficiency 60% (Typ)
- Cost Effective PowerMacro Package
- Electroless Tin Plated Leads for Improved Solderability
No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
MFR: MRF553-MSC -
MRF545 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)
$5.91 As low as: $5.06Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
- Silicon PNP, high Frequency, high breakdown, Transistor
- Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
- High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
- High FT - 1400 MHz
No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF545-MSC -
MRF545 APT RF and Microwave Discrete Low Power Transistor (NOS)
$4.91Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
- Silicon PNP, high Frequency, high breakdown, Transistor
- Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
- High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
- High FT - 1400 MHz
New Old Stock * No longer available for export
MFR: Advanced Power Technology RF
SKU: MRF545-APT -
MRF544 APT NPN Silicon RF and Microwave Discrete Low Power Transistor (NOS)
$5.91 As low as: $5.06Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
- Silicon NPN, high Frequency, high breakdown Transistor
- Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz
- High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
- High FT - 1400 MHz
New Old Stock * No longer available for export
MFR: APT -
MRF517 APT RF & Microwave Discrete Low Power Transistor
$7.91 As low as: $7.13The MRF517 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include low noise broadband amplifier; pre-driver, driver, and output stages.
- Silicon NPN, To-39 packaged VHF/UHF Transistor
- Gpe = 10 dB (typ) @ 60 mA, 300 MHz
- 3 GHz Current-Gain Bandwidth Product @ 60mA
- Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz
MFR: Advanced Power Technology RF
SKU: MRF517-APT -
MRF4427 Microsemi RF & Microwave Discrete Low Power Transistor 20dB 200 MHz (NOS)
$1.91Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.
- Low Cost SO-8 Plastic Surface Mount Package.
- S-Parameter Characterization
- Tape and Reel Packaging Options Available
- Low Voltage Version of MRF3866
- Maximum Available Gain – 20dB(typ) @ 200MHz
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF4427-MSC -
MRF3866 APT RF & Microwave Discrete Low Power Transistor 17 dB 300 MHz
$1.91 As low as: $1.72 -
MRF247 TRW Transistor 175 MHz 75w 12.5v (Low Beta) (NOS)
$54.91 -
MRF237 Microsemi NPN Silicon RF Power Transistor 12.5 V/90 MHz/15 W (NOS)
$9.91 -
MRF227 Microsemi NPN Silicon RF Power Transistor 12.5 V 225 MHz 3W
$6.91 As low as: $5.61Designed for 12.5 Volt VHF large-signal power amplifier applications in communication equipment operating at 225 MHz. Ideally suited for Class E citizens band radio.
- Specified 12.5 Volt, 225 MHz Characteristics- Output Power= 3.0 W, Minimum Gain= 13.5 dB, efficiency= 60%
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF227-MSC -
SRF7000-90 Motorola Transistor 70W 12.5V 14-30 MHz 0.380" Flange (MRF455) Matched Pair (2) (NOS)
$159.91 -
SRF3883 Motorola Transistor 12 volt (use cross MRF245) (NOS)
Call for Price
1-800-RFPARTS (1-800-737-2787) -
SRF3800 Motorola Transistor 12 volt (Selected MRF492) Matched Quad (4) (NOS)
$391.91 -
SRF3800 Motorola Transistor 12 volt (Selected MRF492) Matched Pair (2) (NOS)
$195.91 -
SRF3800 Motorola Transistor 12 volt (Selected MRF492) (NOS)
$97.91 -
SRF3795 Motorola Transistor 12V Premium Grade Replacement for the MRF454 Matched Quad (4) (NOS)
$247.91Out of stock
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SRF3795 Motorola 12V Transistor Premium Grade Replacement for the MRF454 Matched Pair (2) (NOS)
$123.91Out of stock
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SRF3795 Motorola Transistor 12V Premium Grade Replacement for MRF454 80W Transistor (NOS)
$61.91 -
SRF3775 Motorola Transistor 75W 12.5V 14-30 MHz 0.380 Flange Matched Quad (4) (MRF455) (NOS)
$231.91 -
SRF3775 Motorola Transistor 75W 12.5V 14-30 MHz 0.380 Flange Matched Pair (2) (MRF455) (NOS)
$115.91 -
SRF3775 Motorola Transistor 75w 12.5v 14-30 MHz 0.380 Flange (MRF455) (NOS)
$57.91 -
SRF3749 Motorola Transistor 12V Premium grade replacement for MRF454 Matched Pair (2) (NOS)
$210.91The SRF3749 12 Vold Motorola Transistor is a premium grade replacement for the MRF454, 80 Watt transistor. This transistor has High Gain selection G or Blue beta or higher. You can use the SRF3749 as direct replacement for any application where MRF454 was used.
Matched Pair (2)
New Old Stock * No longer available for export
MFR: Motorola
SKU: SRF3749MP -
SRF3749 Motorola Transistor 12V Premium Grade Replacement for MRF454 (NOS)
$105.91 -
SRF3614 Motorola Transistor 12 volt 45 Watt (Selected Gain MRF646) Matched Pair (2) (NOS)
$77.91 -
SRF3614 Motorola Transistor 12 Volt 45 Watt (Selected Gain MRF646) (NOS)
$38.91 -
SRF2072 Motorola Transistor 70w 12.5V 14-30 MHz 0.380" Flange Mount (MRF455) (NOS)
$47.91 -
MRF966 Motorola N-Channel Dual-Gate GaAs Field-Effect Transistor 12V (NOS)
$6.91 -
MRF911 Motorola NPN Silicon High Frequency Transistor (NOS)
$10.91Designed primarily for use in high-gain, low-noise tuned and wideband small-signal amplifiers. Excellent in high-speed switching applications.
- High Current-Gain -Bandwidth Product- fT= 5.0 GHz (Typ) at f= 1.0 GHz
- High Power Gain- Gmax= 12.5 dB (Typ) at f= 1.0 GHz
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF911 -
MRF9011LT1 Motorola NPN High-Frequency Surface Mount Transistor (NOS)
$4.91Designed primarily for use in high-gain, low noise small-signal amplifiers for operation up to 2.5GHz.
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF9011LT1See Data Sheet
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MRF901 Motorola NPN Silicon High-Frequency Transistor 12 V (NOS)
$3.91 -
MRF897 Motorola NPN Silicon RF Power Transistor 24 V 900 MHz 30 W (NOS)
$39.91 -
MRF896 Motorola NPN Silicon RF Power Transistor 3W 900 MHz (NOS)
$24.91Designed for 24 Volt UHF large-signal, common emitter, Class AB and Class A linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800-960 MHz.
- Specified 24 volt, 900 MHz Characteristics
- Output Power: 3.0 Watts
- Minimum Gain: 10dB @ 900 MHz
- Minimum Efficiency: 30% @ 900 MHz, 3.0 Watts
- Characterized with Series Equivalent Large-Signal Parameters from 800 to 960 MHz
- Silicon Nitride Passivated
- 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, at rated putput power
- Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
New Old Stock * No longer available for export
MFR: Motorola
SKU: MFR896 -
MRF892 Motorola NPN Silicon RF Power Transistor 14 W 24 V 900 MHz (NOS)
$42.91 -
MRF891 Motorola NPN Silicon RF Power Transistor 5.0W 24V 900 MHz (NOS)
$46.91 -
MRF873 Motorola NPN Silicon RF Power Transistor 15W 12.5V 870 MHz (NOS)
$37.91Designed for 12.5 Volt UHF large–signal, common emitter, applications in industrial and commercial FM equipment operating in the range of 806 to 960 MHz.
- Specified 12.5 V, 870 MHz Characteristics: Output Power = 6.5 Watts, Minimum Gain = 7 dB, Efficiency= 60%
- Series Equivalent Large–Signal Characterization
- Silicon Nitride Passivated
- Capable of withstanding 20:1 VSWR Load Mismatch at Rated Input Power and 15.5 Vdc
- Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF873 -
MRF859 Motorola NPN Silicon RF Power Transistor 6.5 W 24 Vdc (NOS)
$49.91 -
MRF847 Motorola NPN Silicon RF Power Transistor 12.5V 870 MHz 45W (NOS)
$44.91Designed for 12.5 volt UHF large–signal, common–base amplifier applications in industrial and commercial FM equipment operating in the range of 806–960 MHz.
- Specified 12.5 Volt, 870 MHz Characteristics: Output Power = 45 Watts, Power Gain = 4.5 dB Min, Efficiency = 60% Min
- Series Equivalent Large–Signal Characterization
- Internally Matched Input for Broadband Operation
- Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ High Line and Rated Drive
- Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
- Silicon Nitride Passivated
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF847 -
MRF844 Motorola NPN Silicon RF Power Transistor 12.5V 870 MHz 30W (NOS)
$49.91Designed for 12.5 Volt UHF large-signal. common-base amplifier applications in industrial and commercial FM equipment operating in the range of 806-947 MHz.
- Specified 12.5 Volt, 870 MHz Characteristics: Output Power= 30 Watts, Minimum Gain= 5.2 dB, Efficiency= 50%
- Series Equivalent Large-Signal Characterization
- Internally Matched Input for Broadband Operation
- Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
- Silicon Nitride Passivated
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF844 -
MRF843F Motorola Bipolar NPN Silicon Power Transistor 12 volt (NOS)
$39.91 -
MRF841 Motorola NPN Silicon RF Power Transistor 12.5V 870 MHz 10W (NOS)
$35.91 -
MRF839 Motorola NPN Silicon RF Power Transistor 12.5 Volt 806-960 MHz (NOS)
$49.91 -
MRF8372 Motorola NPN Silicon RF Low Power Transistor (NOS)
$3.91 -
MRF754 Motorola NPN Silicon High Frequency Transistor 7.5V 470 MHz 8W (NOS)
$29.91Designed for 5.0 to 10 V UHF large-signal amplifier applications in industrial and commercial FM equipment operating in the 407 to 512 MHz range. Ideally suited for handheld radios and other equipment where high packaging density is required.
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF754 -
MRF752 Motorola NPN Silicon High Frequency Transistor 7.5V 470 MHz 2.5W (NOS)
$48.91Designed for 5.0 to 10 V UHF large-signal amplifier applications in industrial and commercial FM equipment operating in the 407 to 512 MHz range. Ideally suited for handheld radios and other equipment where high packaging density is required.
- Specified 7.5 V, 470 MHz Characteristics: Output Power= 2.5 W, Minimum gain= 8.0 dB, Minimum Efficiency= 55%
- Capable of Withstanding load Mismatch at High line and RF Overdrive
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF752 -
MRF660 Motorola NPN Silicon RF Power Transistor 12.5V 470MHz 7W (NOS)
$21.91Designed for 12.5 Volt UHF large signal power amplifier applications in industrial and commercial FM equipment.
- Specified 12.5 Volt, 470 MHz Performance — Output Power = 7.0 Watts, Minimum Power Gain = 5.4 dB, Efficiency = 60% Min
- Low Cost Common Emitter TO-220AB Package
- Load Mismatch Capability at High Line and RF Input Overdrive
New Old Stock * No longer available for export
MFR: Motorola -
MRF654 Motorola NPN Silicon RF Power Transistor 12.5V 512 MHz 15W (NOS)
$29.91Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
- Specified 12.5 Volt, 512 MHz Characteristics: Output Power = 15 W, Minimum Gain = 7.8 dB, Efficiency = 55%
- Built–In Matching Network for Broadband Operation
- Gold Metallized, Emitter Ballasted for Long Life and Reliability
- Capable of 20:1 VSWR Load Mismatch at 15.5 V Supply Voltage
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF654 -
MRF650 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 50W Matched Pair (2) (NOS)
$111.91 -
MRF650 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 50W (NOS)
$55.91 -
MRF648 / M11L60 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 60W Matched Pair (2)
$97.91Out of stock
Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
- Specified 12.5 Volt, 470 MHz Characteristics — Output Power = 60 Watts, Minimum Gain = 4.4 dB, Efficiency = 55%
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Built–In Matching Network for Broadband Operation
- Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–Volt High Line and 20% Overdrive
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF648MP -
MRF648 / M1160 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 60W (NOS)
$48.91Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
- Specified 12.5 Volt, 470 MHz Characteristics — Output Power = 60 Watts, Minimum Gain = 4.4 dB, Efficiency = 55%
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Built–In Matching Network for Broadband Operation
- Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–Volt High Line and 20% Overdrive
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF648 -
MRF646 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 45W Matched Pair (2) (NOS)
$79.91 -
MRF646 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 45W (NOS)
$39.91 -
MRF644 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 25W Matched Pair (2) (NOS)
$65.91Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
- Specified 12.5 Volt, 470 MHz Characteristics — Output Power = 25 Watts, Minimum Gain = 6.2 dB, Efficiency = 60%
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Built–In Matching Network for Broadband Operation
- Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–Volt High Line and 50% Overdrive
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF644MP -
MRF644 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 25W (NOS)
$32.91Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
- Specified 12.5 Volt, 470 MHz Characteristics — Output Power = 25 Watts, Minimum Gain = 6.2 dB, Efficiency = 60%
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Built–In Matching Network for Broadband Operation
- Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–Volt High Line and 50% Overdrive
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF644 -
MRF641 Motorola NPN Silicon RF Power Transistor 12.5 V 470 MHz 15 W Matched Pair (2) (NOS)
$113.91Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
- Specified 12.5 Volt, 470 MHz Characteristics — Output Power = 15 Watts, Minimum Gain = 7.8 dB, Efficiency = 55%
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Built–In Matching Network for Broadband Operation
- Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–Volt High Line and Overdrive
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF641MP -
MRF641 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 15W (NOS)
$56.91Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz
- Specified 12.5 Volt, 470 MHz Characteristics — Output Power = 15 Watts, Minimum Gain = 7.8 dB, Efficiency = 55%
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Built–In Matching Network for Broadband Operation
- Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–Volt High Line and Overdrive
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF641-MOTMade in the USA -
MRF630 Motorola RF Power Transistor NPN Silicon 12.5V 470 MHz 3.0W (NOS)
$11.91 -
MRF629 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 2.0W (NOS)
$4.91Designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
- Specified 12.5 Volt, 470 MHz Characteristics: Output Power= 2.0 W, Minimum Gain= 8.0 dB, Efficiency= 50%
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Grounded Emitter TO-39 Package for High Gain and Excellent Heat Dissipation
- Replaces Medium-Power Stud Mounted Devices
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF629 -
MRF627 Motorola NPN High Frequency Transistor 0.5W 470 MHz 12.5V (NOS)
$25.91 -
MRF607-S Microsemi Transistor with Trimmed Leads (NOS)
$4.91The MRF607 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier,
pre-driver, driver, and output stages.- 12.5V Silicon NPN, TO-39 packaged VHF & UHF Transistor
- 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz
- 11.5 minimum Gain @ 12.5V, 175 MHz
- 50% Efficiency @ 12.5V, 175 MHz
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF607-S -
MRF607 Motorola NPN Silicon RF Power Transistor 12.5V 175 MHz 1.75W (NOS)
$3.91Designed for amplifier, frequency multiplier, or oscillator applications in military, mobile, marine and citizens band equipment. Suitable for use as output driver or pre-driver stages in VHF and UHF equipment.
- Specified 12.5 Volt, 175 MHz Characteristics: Output Power= 1.75 W, Minimum Gain= 11.5 dB, Efficiency= 50%
- Characterized through 225 MHz
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF607 -
MRF5943 Motorola NPN Silicon High Frequency Transistor (NOS)
$3.91Designed for amplifier, oscillator or frequency multiplier applications in industrial equipment. Suitable for use as a Class A, B, or C output driver or pre-driver stages in VHF and UHF.
- Low Cost SORF Plastic Surface Mount Package
- Guarenteed RF Specification- |S21|2
- S-Parameter Characterization
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF5943-MOT -
MRF581 Motorola NPN Silicon High Frequency Transistor (NOS)
$4.91 -
MRF5812 Motorola NPN Silicon High-Frequency Transistor (NOS)
$4.91Designed for high current low power amplifiers up to 1.0 GHz.
- Low Noise (2dB @ 500MHz)
- Low Intermodulation Distorion
- High Gain
- State-of-the-Art Technology
- Excellent Dynamic Range
- Fully Characterized
- High Current-Gain Bandwidth Product
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF5812-MOT -
MRF571 Transistor (NOS)
$7.91 -
MRF559 Motorola NPN Silicon High Frequency Transistor 0.5W 870 MHz 12V (NOS)
$4.91 -
MRF557 Motorola NPN Silicon RF Low Power Transistor 12.5V 870 MHz 1.5W (NOS)
$4.91Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range.
- Specified @ 12.5 V, 870 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 8.0 dB, Efficiency 60% (Typ)
- Cost Effective PowerMacro Package
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF557-MOT -
MRF544 Motorola NPN Silicon High Frequency Transistor (NOS)
$5.91 -
MRF531 Motorola NPN Silicon High-Frequency Transistor (NOS)
$4.91Designed for high voltage and high current fT switching applications. These devices are also ideal for CRT drivers.
- High Current Gain–Bandwidth Product — fT = 800 MHz (Typ) at IC= 50 mAdc
- High Collector Emitter Breakdown Voltage- V(BR)CEO= 100 Vdc (Min) at IC= 10 mAdc
- Characterized with Safe Operating Area (SOA) Curves
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF531 -
MRF521 Motorola PNP Silicon High-Frequency Transistor (NOS)
$9.91 -
MRF515 Motorola NPN Silicon High Frequency Transistor 12.5V 470MHz 0.75W (NOS)
$3.91Designed for 12.5 V UHF large-signal amplifier applications required in industrial equipment.
- Specified 12.5 Volt, 470 MHz Characteristics: Output Power= 0.75 Watts, Minimum Gain= 8.0 dB, Efficiency= 50%
- S Parameter Data from 100 MHz to 1.0 MHz
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF515 -
MRF502 Motorola NPN Silicon High Frequency Transistor (NOS)
$2.91Designed primarily for use in high-gain, low-noise amplifier, oscillator, and mixer applications. Can also be used in UHF converter applications.
- High Current-Gain- Bandwidth Product- fT= 1.2 GHz (Typ) at IC= 5.0 mAdc
- Low Noise Figure- NF= 4.0 dB (Typ) at f= 200 MHz
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF502 -
MRF5015 Motorola RF Power Field Effect Transistor RF Mosfet N–Channel Enhancement–Mode 512 MHz 15W 12.5V (NOS)
$39.91Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment.
- Guaranteed Performance at 512 MHz, 12.5 Volts: Output Power — 15 Watts, Power Gain — 10 dB Min, Efficiency — 50% Min
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- S–Parameter Characterization at High Bias Levels
- Excellent Thermal Stability
- All Gold Metal for Ultra Reliability
- Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF5015 -
MRF5003 Motorola RF Power Field Effect Transistor RF MOSFET N–Channel Enhancement–Mode 512 MHz 7.5V 3.0W (NOS)
$19.91Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equipment.
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF5003 -
MRF497 Motorola NPN Silicon RF Power Transistor 40W 50 MHz 12V Matched Pair (2) (NOS)
$125.91Out of stock
-
MRF497 Motorola NPN Silicon RF Power Transistor 40W 50 MHz 12V (NOS) (Sub for MRF477)
$62.91 -
MRF492 Motorola Transistor 12V Matched Quad (4) (NOS)
$211.91 -
MRF492 Motorola NPN Silicon RF Power Transistor 50 MHz 70W 12.5V Matched Pair (2) (NOS)
$105.91 -
MRF492A Motorola NPN Silicon RF Power Transistor Stud Mount 50 MHz 70W 12.5V Matched Quad (4) (NOS)
$515.91 -
MRF492A Motorola NPN Silicon RF Power Transistor Stud Mount 50 MHz 70W 12.5V Matched Pair (2) (NOS)
$257.91 -
MRF492A Motorola NPN Silicon RF Power Transistor Stud Mount 50 MHz 70W 12.5V (NOS)
$128.91 -
MRF492 Motorola NPN Silicon RF Power Transistor 50 MHz 70W 12.5V Mixed lots (NOS)
$52.91Designed for 12.5 volt low band VHF large-signal power amplifier applications in commercial and industrial FM equipment.
- Specified 12.5 V, 50 MHz Characteristics: Output Power= 70 W, Minimum gain= 11 dB, Efficiency= 50%
- limited Stock on hand, misc. mixed lot / DC and beta code
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF492 -
MRF486 Motorola NPN Silicon RF Power Transistor 28 Volt 30 MHz (NOS)
$79.91Out of stock
Designed primarily for application as a high-power linear amplifier from 1.5 to 30 MHz, in single sideband mobile, marine, and base station equipment.
- Common-Emitter TO0220AB Package
- 28 Volt, 30MHz
- Output Power: 40 Watts (PEP)
- Power Gain: 15 dB Minimum
- Efficiency: 40% Minimum
- 30:1 VSWR
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF486 -
MRF485 Motorola NPN Silicon RF Power Transistor 28V 30 MHz 15W (PEP) Low Beta (NOS)
$54.91NPN Silicon RF Power Transistor 28V 30 MHz 15W (PEP) Low Beta
Preferred part for Kenwood transceivers. Only available in single parts, no matched.
NOTE: PICTURE FOR REFERENCE ONLY. BETA GROUP WILL VARY. LO BETA IS: RED - B, ORANGE - C, AND YELLOW - D EITHER COLOR DOT OR LETTER CODE.
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF485-LO -
MRF485 Motorola NPN Silicon RF Power Transistor 28V 30 MHz 15 W (PEP) High Beta Matched Pair (2) (NOS)
$109.91Designed primarily for use in single sideband linear amplifier output applications and other communications equipment operating to 30 MHz.
Not for Early Model Kenwood
NOTE: The SV-03YS was Varistor Diode used in late model Kenwood TS-940 radios. Click Here SV-03YS
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF485MP-HINote: limited to One Pair - Per Customer Per Order
Made in the USA -
MRF485 Motorola NPN Silicon RF Power Transistor 28V 30 MHz 15W (PEP) High Beta (NOS)
$54.91Designed primarily for use in single sideband linear amplifier output applications and other communications equipment operating to 30 MHz.
Not for Early Model Kenwood.
NOTE: The SV-03YS was a Varistor Diode used in late model Kenwood TS-940 radios. Click Here SV-03YS
New Old Stock * No longer available for export
MFR: Motorola -
MRF479 Motorola NPN Silicon Power Transistor 15W 30 MHz 12.5V Matched Pair (2) (NOS)
$39.91Designed Primarily for use in single sideband linear amplifier output applications in citizens band and other communications equipment operating to 50 MHz.
- Specified 12.5 V, 30 MHz characteristics: Output power = 15 W (PEP AND CW), Minimum Power gain = 12 dB, Minimum Efficiency = 40%
- Intermodulation Distortion at 15 W (PEP)= -30 dB (Max)
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF479MP -
MRF479 Motorola NPN Silicon Power Transistor 15W 30 MHz 12.5V (NOS)
$19.91Designed Primarily for use in single sideband linear amplifier output applications in citizens band and other communications equipment operating to 50 MHz.
- Specified 12.5 V, 30 MHz characteristics: Output power = 15 W (PEP AND CW), Minimum Power gain = 12 dB, Minimum Efficiency = 40%
- Intermodulation Distortion at 15 W (PEP)= -30 dB (Max)
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF479 -
MRF476 Motorola NPN Silicon Power Transistor 3.0W 50 MHz 12.5V (NOS)
$33.91Out of stock
-
MRF475 Motorola NPN Silicon Power Transistor 12W 30 MHz 13.6V Matched Pair (2) (NOS)
$39.91Designed Primarily for use in single sideband linear amplifier output applications in citizens band and other communications equipment operating to 30 MHz.
- Specified 13.6 V, 30 MHz characteristics: Output power = 12 W (PEP), Minimum Power gain = 10 dB (PEP AND CW), Minimum Efficiency = 40% (SSB), Miniumum Efficiency= 50% (CW)
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF475MPNOTE: The MRF475 is similar to the 2SC1969 transistor with reduced gain. They are pin for pin substitutes. (See MRF475 Data Sheet)
-
MRF475 Motorola NPN Silicon Power Transistor 12W 30 MHz 13.6V (NOS) (Sub for 2SC1969)
$19.91Designed Primarily for use in single sideband linear amplifier output applications in citizens band and other communications equipment operating to 30 MHz.
- Specified 13.6 V, 30 MHz characteristics: Output power = 12 W (PEP), Minimum Power gain = 10 dB (PEP AND CW), Minimum Efficiency = 40% (SSB), Miniumum Efficiency= 50% (CW)
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF475NOTE: The MRF475 is similar to the 2SC1969 transistor with reduced gain. They are pin for pin substitutes. (See MRF475 Data Sheet)
-
MRF466 Motorola NPN Silicon Power Transistor 40W (PEP or CW) 30MHz 28V Matched Pair (2) (NOS)
$77.91Designed primarily for applications as a high-power amplifier from 2.0 to 30 MHz, in single sideband mobile, marine, and base station equipment.
- Specified 28 V, 30 MHz characteristics — Output power = 40 W (PEP or CW), Minimum gain = 15 dB, Efficiency = 40%, Intermodulation distortion d3= –30 dB (Max)
- Guarenteed Ruggedness
- 2N5941 Replacement
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF466MP -
MRF466 NPN Motorola Silicon Power Transistor 40 W (PEP or CW) 30 MHz 28 V (NOS)
$38.91Designed primarily for applications as a high-power amplifier from 2.0 to 30 MHz, in single sideband mobile, marine, and base station equipment.
- Specified 28 V, 30 MHz characteristics — Output power = 40 W (PEP or CW), Minimum gain = 15 dB, Efficiency = 40%, Intermodulation distortion d3= –30 dB (Max)
- Guarenteed Ruggedness
- 2N5941 Replacement
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF466 -
MRF460 Motorola NPN Silicon Power Transistor 40W (PEP) 30 MHz 12.5V Matched Quad (4) (NOS)
$119.91Designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 240 W (PEP), Minimum gain = 12 dB, Efficiency = 40%
- Intermodulation distortion at rated power output —IMD = –30 dB (max)
- Isothermal-Resister Design Results in Rugged Device
- Replacement for 2N6368
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF460MQ -
MRF460 Motorola NPN Silicon Power Transistor 40W (PEP) 30 MHz 12.5V Matched Pair (2) (NOS)
$59.91Designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 240 W (PEP), Minimum gain = 12 dB, Efficiency = 40%
- Intermodulation distortion at rated power output —IMD = –30 dB (max)
- Isothermal-Resister Design Results in Rugged Device
- Replacement for 2N6368
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF460MP -
MRF460 Motorola NPN Silicon Power Transistor 40W (PEP) 30 MHz 12.5V (NOS)
$29.91Designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 240 W (PEP), Minimum gain = 12 dB, Efficiency = 40%
- Intermodulation distortion at rated power output —IMD = –30 dB (max)
- Isothermal-Resister Design Results in Rugged Device
- Replacement for 2N6368
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF460 -
MRF458 Motorola NPN Silicon Power Transistor 80W 12.5V 30 MHz (NOS)
$71.91 -
MRF455 Motorola NPN Silicon Power Transistor 60W 12.5v 14-30 MHz Matched Pair (2) (NOS)
$139.91 -
MRF455 Motorola NPN Silicon Power Transistor 60W 30 MHz 12.5V (NOS)
$69.91 -
SRF7000-90 Motorola Transistor 70W 12.5V 14-30 MHz 0.380" Flange (MRF455) (NOS)
$79.91 -
MRF454 Motorola Transistor 80W 12V Matched Quad (4) (NOS)
$463.91 -
MRF454 M/A-COM NPN Silicon Power Transistor 80W 30 MHz 12.5V Matched Quad (4)
$311.91Out of stock
MRF454 M/A-COM NPN Silicon Power Transistor 80 Watt 30 MHz 12.5 Volt Matched Quad (4) (NOS)
Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics
- Output power = 80 W
- Minimum gain = 12 dB
- Efficiency = 50%
MFR: M/A-COM
SKU: MRF454-MA-MQ -
MRF454 Motorola Transistor 80W 12V Matched Pair (2) (NOS)
$231.91 -
MRF454 Motorola NPN Silicon Power Transistor 80W 30MHz 12.5V (NOS)
$115.91 -
MRF453 Motorola NPN Silicon Power Transistor 60W 30 MHz 12.5 V Matched Quad (4) (NOS)
$159.91 -
MRF453 Motorola NPN Silicon Power Transistor 60W 30 MHz 12.5V Matched Pair (2) (NOS)
$79.91 -
MRF453A Motorola NPN Silicon Power Transistor Stud-Mount 60W 30 MHz 12.5V (NOS)
$66.91Designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics: Output power = 60 W, Minimum gain = 13 dB, Efficiency = 55%
NOTE: The MRF453A is similar to MRF455A but with larger stud package. The MRF455A was 3/8" Stud and MRF453A is 1/2" Stud. Larger hole in heatsink and more room on circuit board will allow the MRF453A to replace the obsolete MRF455A.
New Old Stock * No longer available for export
MFR: Motorola -
MRF453 Motorola NPN Silicon Power Transistor 60W 30 MHz 12.5V (NOS)
$39.91 -
MRF450A Motorola NPN Silicon Power Transistor Stud-Mount 50W 30 MHz 12.5V Matched Quad (4) (NOS)
$279.91 -
MRF450A Motorola NPN Silicon Power Transistor Stud-Mount 50W 30 MHz 12.5V Matched Pair (2) (NOS)
$139.91 -
MRF450A Motorola NPN Silicon Power Transistor Stud-Mount 50W 30 MHz 12.5V (NOS)
$69.91 -
MRF450 Motorola NPN Silicon Power Transistor 50W 30 MHz 12.5V (NOS)
$39.91 -
MRF449 Motorola NPN Silicon Power Transistor 30W 30 MHz 12.5V Matched Pair (2) (NOS)
$65.91 -
MRF449A Motorola NPN Silicon Power Transistor Stud Mount 30W 30 MHz 12.5V Matched Pair (2) (NOS)
$79.91Out of stock
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MRF449 Motorola NPN Silicon Power Transistor 30W 30 MHz 12.5V (NOS)
$32.91 -
MRF448 Motorola NPN Silicon Power Transistor 250W 30 MHz 50V (NOS)
$149.91Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment. ROHS Compliant.
- Specified 50 V, 30 MHz characteristics: Output power = 250 W, Minimum gain = 12 dB, Efficiency = 45%
- Intermodulation distortion @ 250 W (PEP) — IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 3:1 VSWR
New Old Stock * No longer available for export
MFR: Motorola, USA
SKU:MRF448-MOT -
MRF435 Motorola NPN Silicon RF Power Transistor 28V 30 MHz 150W Matched Pair (2) (NOS)
$79.91Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 28 V, 30 MHz, Characteristics; Output Power= 150 W, Minimum Gain= 10 dB, Efficiency= 40%
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF435MP -
MRF433 Motorola Transistor NPN Silicon 12.5 Watt 30 MHz (NOS)
$48.91 -
MRF429 Motorola NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V Matched Pair (2) (NOS)
$298.91 -
MRF429 Motorola NPN Silicon Transistor 150W (PEP) 30 MHz 50V (NOS)
$149.91Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
When ordering 50+ pieces, the order will require approval. This will take 1-2 days.
- Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP), Minimum gain = 13 dB, Efficiency = 45%
- Intermodulation distortion @ 150 W (PEP) — IMD = –32 dB (Max)
- Diffused emitter resistors for superior ruggedness
- 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF429-MOTMade in the USA -
MRF428 Motorola NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V Matched Pair (2) (NOS)
$269.91Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
- Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF428MP-MOT -
MRF428 Motorola NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V (NOS)
$134.91Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
- Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF428-MOT -
MRF427A Motorola Transistor 50V 25W 30 MHz Matched Pair (2) (NOS)
$82.91 -
MRF427 Motorola NPN Silicon RF Power Transistor 50V 25W 30 MHz (NOS)
$41.91Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Output Power: 25W(PEP)
- Minimum Gain: 18dB
- Intermodulation Distorion @ 25W(PEP): -34dB (Minimum)
- VSWR: 30:1
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF427 -
MRF426 Motorola NPN Silicon Power Transistor 25W (PEP) 30 MHz 28V Matched Pair (2) (NOS)
$79.91Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.
- Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
- Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Class A and AB characterization
- BLX 13 equivalent
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF426MP-MOT -
MRF426 Motorola NPN Silicon Power Transistor 25W (PEP) 30 MHz 28V (NOS)
$39.91 -
MRF426A Motorola NPN Silicon Power Transistor 25W (PEP) 30 MHz 28V Stud Mount Matched Pair (2) (NOS)
$71.91Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.
- Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
- Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Class A and AB characterization
- BLX 13 equivalent
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF426AMP -
MRF426A Motorola NPN Silicon Power Transistor 25W (PEP) 30 MHz 28V Stud Mount (NOS)
$35.91Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.
- Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
- Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Class A and AB characterization
- BLX 13 equivalent
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF426A -
MRF422 Motorola NPN Silicon Power Transistor 150W (PEP) 30 MHz 28V (NOS)
$109.91Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF422-MOT -
MRF422 Motorola NPN Silicon Power Transistor 150W (PEP) 30 MHz 28V Low Beta Matched Pair (2) (NOS)
$157.91 -
MRF421 Motorola MRF421 NPN Silicon Power Transistor 100W (PEP) 30 MHz 12V (NOS)
$109.91Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF421-MOT -
MRF420 Motorola RF Power Transistor 75Watts (PEP) 10dB 12.5 Volts (NOS)
$16.91 -
MRF412 Motorola NPN Silicon RF Power Transistor 70W (PEP or CW) 30 MHz 13.6V Matched Pair (2) (NOS)
$79.91Designed primarily for applications as a high-power amplifier from 2.0 to 30 MHz, in single sideband mobile, marine, and base station equipment where superior riggedness is required.
- Specified 13.6 Volt, 30 MHz Characteristics- Output Power= 70 W (PEP or CW), Minimum Gain= 13 dB, Efficiency= 40%, Intermodulation Distortion d3 = 0-33 dB Typ
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF412MP -
MRF412 Motorola NPN Silicon RF Power Transistor 70W (PEP or CW) 30 MHz 13.6V (NOS)
$39.91Designed primarily for applications as a high-power amplifier from 2.0 to 30 MHz, in single sideband mobile, marine, and base station equipment where superior riggedness is required.
- Specified 13.6 Volt, 30 MHz Characteristics- Output Power= 70 W (PEP or CW), Minimum Gain= 13 dB, Efficiency= 40%, Intermodulation Distortion d3 = 0-33 dB Typ
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF412 -
MRF406 Motorola NPN Silicon RF Power Transistor 20W (PEP) 30 MHz 12.5V Matched Pair (2) (NOS)
$85.91Designed primarily for applications as a power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 Volt, 30 MHz Characteristics- Output Power= 20 W (PEP), Minimum Gain= 12 dB, Efficiency= 45%
- Intermodulation Distortion at 20 W (PEP)= -30 dB (Min)
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF406MP -
MRF406 Motorola NPN Silicon RF Power Transistor 20W (PEP) 30 MHz 12.5V (NOS)
$42.91Out of stock
Designed primarily for applications as a power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 Volt, 30 MHz Characteristics- Output Power= 20 W (PEP), Minimum Gain= 12 dB, Efficiency= 45%
- Intermodulation Distortion at 20 W (PEP)= -30 dB (Min)
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF406 -
MRF401 Motorola NPN Silicon RF Power Transistor 25W (PEP) 30 MHz 28V Matched Pair (2) (NOS)
$31.91 -
MRF401 Motorola NPN Silicon RF Power Transistor 25W (PEP) 30 MHz 28V (NOS)
$15.91 -
MRF3866 Motorola NPN Silicon High-Frequency Transistor (NOS)
$4.91 -
MRF338 Motorola NPN Silicon RF Power Transistor 28V 470 MHz 80W (NOS)
$89.91 -
MRF329 Motorola NPN Silicon RF Power Transistor 28V 400 MHz 100W (NOS)
$79.91 -
MRF328 Motorola NPN Silicon RF Power Transistor 28V 400 MHz 100W (NOS)
$58.91 -
MRF327 Motorola Controlled “Q” Broadband Power Transistor 80W 100 to 500MHz 28V Matched Pair (2) (NOS)
$97.91Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.
- Guaranteed performance @ 400 MHz, 28 Vdc; Output power = 80 W over 225 to 400 MHz Band, Minimum gain = 7.3 dB @ 400 MHz
- Built–in matching network for broadband operation using double match technique
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
- Characterized for 100 =8 500 MHz
New Old Stock * No longer available for export
MRF: Motorola
SKU: MRF327MP -
MRF327 Motorola Controlled “Q” Broadband Power Transistor 80W 100 to 500MHz 28V (NOS)
$48.91Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.
- Guaranteed performance @ 400 MHz, 28 Vdc; Output power = 80 W over 225 to 400 MHz Band, Minimum gain = 7.3 dB @ 400 MHz
- Built–in matching network for broadband operation using double match technique
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
- Characterized for 100 =8 500 MHz
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF327-MOT -
MRF323 Motorola Transistor 20W 28V 400 MHz (NOS)
$119.91- Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 V: Output power = 20 W, Power gain = 10 dB min., Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input impedance
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF323-MOT -
MRF321 Motorola NPN Silicon Power Transistor 10W 400MHz 28V (NOS)
$135.91 -
MRF317 Motorola NPN Silicon Power Transistor 100W 30-200MHz 28V Matched Pair (2) (NOS)
$210.91Designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 100 W, Minimum gain = 9.0 dB
- Built–in matching network for broadband operation
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- High output saturation power — ideally suited for 30 W carrier/120 W
- Peak AM amplifier service
- Guaranteed performance in broadband test fixture
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF317MP -
MRF317 Motorola NPN Silicon Power Transistor 100W 30-200MHz 28V (NOS)
$105.91Designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 100 W, Minimum gain = 9.0 dB
- Built–in matching network for broadband operation
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- High output saturation power — ideally suited for 30 W carrier/120 W
- Peak AM amplifier service
- Guaranteed performance in broadband test fixture
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF317-MOT -
MRF316 Motorola NPN Silicon Power Transistor 80W 3.0-200MHz 28V Matched Pair (2) (NOS)
$139.91Designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 80 W, Minimum gain = 10 dB
- Built–in matching network for broadband operation
- 100% tested for load mismatch at all phase angles with: 30:1 VSWR
- Gold metallization system for high reliability applications
New Old Stock *No longer available for export
MFR: Motorola
SKU: MRF316MP -
MRF316 Motorola NPN Silicon Power Transistor 80W 3.0-200MHz 28V (NOS)
$69.91Designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 80 W, Minimum gain = 10 dB
- Built–in matching network for broadband operation
- 100% tested for load mismatch at all phase angles with: 30:1 VSWR
- Gold metallization system for high reliability applications
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF316-MOT -
MRF315 Motorola NPN Silicon RF Power Transistor 28 Volt Matched Pair (2) (NOS)
$139.91Designed primarily for wideband large-scale output amplifier stages in the 30 to 200 MHz frequency range.
- Guaranteed Performance at 150 MHz, 28 Vdc
- Output Power = 45 Watts
- Minimum Gain = 9.0 dB
- 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
- Gold Metallization System for HIgh Reliability Applications
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF315MP -
MRF315 Motorola NPN Silicon RF Power Transistor 28 Volt (NOS)
$69.91Designed primarily for wideband large-scale output amplifier stages in the 30 to 200 MHz frequency range.
- Gauranteed Perfomance at 150 MHz, 28 Vdc
- Output Power = 45 Watts
- Minimum Gain = 9.0 dB
- 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
- GOld Metallization System for HIgh Reliability Applications
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF315 -
MRF314 Motorola NPN Silicon Power Transistor 30W 30-200MHz 28V Matched Pair (2) (NOS)
$105.91Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF314MP -
MRF314 Motorola NPN Silicon Power Transistor 30W 30-200MHz 28V (NOS)
$52.91Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF314-MOT -
MRF314A Motorola PN Silicon Power Transistor Stud Mount 30W 30-200MHz 28V Matched Pair (2)
$89.91Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF314AMP -
MRF314A Motorola NPN Silicon Power Transistor Stud Mount 30W 30-200MHz 28V (NOS)
$44.91Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF314A -
MRF309 Motorola Transistor 28 Volt Matched Pair (2) (NOS)
$85.91 -
MRF275G Motorola Mosfet Transistor 150W 500MHz 28V (NOS)
$249.91 -
MRF264 Motorola NPN Silicon RF Power Transistor 12.5V 175 MHz 5.0W (NOS)
$49.91Designed for 12.5 Volt VHF large-signal power amplifier applications in industrial and commercial FM equipment.
- Low-Cost Common-Emitter TO-220AB Package
- Specified 12.5 Volt, 175 MHz Performance: Output Power= 30 W, Power Gain= 5.2 dB, Efficiency= 60%
New Old Stock * No longer availablle for export
MFR: Motorola
SKU: MRF264 -
MRF2628 Motorola NPN Silicon Power Transistor 12.5V 175 MHz 15W (NOS)
$39.91Designed for 12.5 volt VHF large–signal power amplifiers in commercial and industrial FM equipment.
- Compact .280 Stud Package
- Specified 12.5 V, 175 MHz Performance: Output Power = 15 Watts, Power Gain = 12 dB Min, Efficiency = 60% Min
- Characterized to 220 MHz
- Load Mismatch Capability at High Line and Overdrive
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF2628 -
MRF261 Motorola NPN Silicon RF Power Transistor 12.5V 175 MHz 10W (NOS)
$12.91Designed for 12.5 Volt VHF large-signal power amplifier applications in industrial and commercial equipment.
- Specified 12.5 V, 175 MHz Perfromance: Output Power= 10 W, Minimum Power Gain= 5.2 dB, Efficiency= 55% Min
- Load Mismatch Capability at High Line and RF Overdrive
- Low-Cost, Common-Emitter TO-220 Package
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF261 -
MRF260 Motorola NPN Silicon RF Power Transistor 12.5V 175 MHz 5.0W Matched Pair (2) (NOS)
$39.91Designed for 12.5 Volt VHF large-signal power amplifier applications in industrial and commercial equipment.
- Low-Cost Common-Emitter TO-22AB Package
- Specified 12.5 Volt, 175 MHz Performance: Output Power= 5.0 W, Power Gain= 10 dB, Efficiency= 55%
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF260MP -
MRF260 Motorola NPN Silicon RF Power Transistor 12.5V 175 MHz 5.0W (NOS)
$19.91Designed for 12.5 Volt VHF large-signal power amplifier applications in industrial and commercial equipment.
- Low-Cost Common-Emitter TO-220AB Package
- Specified 12.5 Volt, 175 MHz Performance: Output Power= 5.0 W, Power Gain= 10 dB, Efficiency= 55%
New Old Stok * No longer available for export
MFR: Motorola
SKU: MRF260 -
MRF250 Motorola NPN Silicon RF Power Transistor 12.5V 175 MHz 50W (NOS)
$22.91 -
MRF248 Motorola NPN Silicon RF Transistor 12V 175 MHz 80W (NOS)
$54.91 -
MRF245 Motorola Transistor NPN Silicon RF Power Transistor 80W 12V 175 MHz Matched Pair (2) (NOS)
$97.91 -
MRF245 Motorola Transistor NPN Silicon RF Power Transistor 80 Watt 12 Volt 175 MHz (NOS)
$48.91 -
MRF240 Motorola NPN Silicon Power Transistor 40W 160 MHz 13.6V (NOS)
$54.91Designed for 13.6 V VHF large-signal Class C and Class AB linear power amplifier applications in industrial and commercial equipment.
- Specified 13.6 V, 160 MHz characteristics — Output power = 40 W, Power Gain = 9.0 dB Min, Efficiency = 55% Min
- High Common Emitter Power Gain
- Load Mismatch Capability at Rated Voltage and RF Drive
- Silicon Nitride Passivated
- Low Intermodulation Distortion, d3= -30 dB Typ
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF240 -
MRF239 Motorola NPN Silicon RF Power Transistor 13.6V 160 MHz 30W Matched Pair (2) (NOS)
$85.91Designed for 13.6 Volt VHF large-signal class C and class AB linear power amplifier applications required in comercial and industrial equipment.
- Specified 13.6 Volt, 160 MHz Characteristics: Output Power= 30 W, Minimum Gain= 10 dB (Min), Efficiency= 65% (Typ)
- High Common Emitter Power Gain
- Silicon Nitride Passivated
- Low Intermodulation Dsitortion, d3= -35 dB Typ
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF239MP -
MRF239 Motorola NPN Silicon RF Power Transistor 13.6V 160 MHz 30W (NOS)
$42.91Designed for 13.6 Volt VHF large-signal class C and class AB linear power amplifier applications required in comercial and industrial equipment.
- Specified 13.6 Volt, 160 MHz Characteristics: Output Power= 30 W, Minimum Gain= 10 dB (Min), Efficiency= 65% (Typ)
- High Common Emitter Power Gain
- Silicon Nitride Passivated
- Low Intermodulation Dsitortion, d3= -35 dB Typ
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF239 -
MRF238 Motorola NPN Silicon RF Power Transistor 13.6V 175 MHz 30W (NOS)
$32.91 -
MRF237 Motorola NPN Silicon RF Power Transistor 12.5V 90 MHz 15W (NOS)
$9.91Designed for 12.5 Volt, mid-band large-signal power amplifier applications in communication equipment operating to 255 MHz.
- Specified 12.5 Volt,175 MHz Characteristics- Output Power= 4.0 W, Minimum Gain= 12 dB, efficiency= 50%
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF237-MOT -
MRF233 Motorola NPN Silicon RF Power Transistor 12.5V 90 MHz 15W (NOS)
$15.91Designed for 12.5 Volt, mid-band large-signal power amplifier applications in industrial and commercial FM equipment operating in the 40 to 100 MHz range.
- Specified 12.5 Volt, 90 MHz Characteristics- Output Power= 15 W, Minimum Gain= 10 dB, efficiency= 55%
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF233 -
MRF232 Motorola NPN Silicon RF Power Transistor 12.5V 90 MHz 7.5W (NOS)
$14.91Designed for 12.5 Volt, mid-band large-signal power amplifier applications in industrial and commercial FM equipment operating in the 40 to 100 MHz range.
- Specified 12.5 Volt, 90 MHz Characteristics- Output Power= 7.5 W, Minimum Gain= 9.0 dB, efficiency= 55%
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF232 -
MRF231 Motorola NPN Silicon RF Power Transistor 12.5V 90 MHz 3.5W (NOS)
$19.91Designed for 12.5 Volt. mid-band large-signal amplifier applications in industrial and commercial FM equipment operating in the 40 to 100 MHz range.
- Specified 12.5 V, 90 MHz Characteriostics: Output Power= 3.5 W, Minimum Gain= 10 dB, Efficiency= 55%
- 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Characterized with Parallel Equivalent Large-Signal Impedance parameters
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF231 -
MRF229 Motorola NPN Silicon Power Transistor 1.5W 90 MHz 12.5V (NOS)
$7.91Designed for 12.5 V, mid-band large-signal amplifier applications in industrial and commercial FM equipment operating in the 40 to 100 MHz range.
- Specified 12.5 V, 90 MHz characteristics — Output power = 1.5 W, Minimum gain = 10 dB, Efficiency = 55%
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Characterized with Series Equivalent Large-signal Impedance Parameters
- Characterized with parallel Equivalent Large-signal Impedance Parameters
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF229 -
MRF227 Motorola NPN Silicon RF Power Transistor 12.5V 225 MHz 3.0W (NOS)
$13.91 -
MRF226 Motorola NPN Silicon RF Power Transistor 12.5V 225 MHz 13W (NOS)
$39.91 -
MRF224 Motorola NPN Silicon RF Power Transistor 12.5V 175 MHz 40W (Tested) (NOS)
$53.91Designed for 12.5 Volt VHF large-signal power amplifier applications required in commercial and industrial equipment operating to 300 MHz.
- Specified 12.5 Volt, 175 MHz Characteristics- Output Power= 40 W, Minimum Gain= 4.5 dB, efficiency= 70%
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF224 -
MRF221 Motorola NPN Silicon RF Power Transistor 12.5V 175 MHz 15W Matched Pair (2) (NOS)
$77.91Designed for 12.5 Volt VHF large-signal power amplifier applications required in commercial and industrial equipment operating to 300 MHz.
- Specified 12.5 Volt, 175 MHz Characteristics- Output Power= 15 W, Minimum Gain= 6.3 dB, efficiency= 60%
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF221MP -
MRF221 Motorola NPN Silicon RF Power Transistor 12.5V 175 MHz 15W (NOS)
$38.91Designed for 12.5 Volt VHF large-signal power amplifier applications required in commercial and industrial equipment operating to 300 MHz.
- Specified 12.5 Volt, 175 MHz Characteristics- Output Power= 15 W, Minimum Gain= 6.3 dB, efficiency= 60%
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF221 -
MRF220 Motorola RF Power Transistor 12 Volt (NOS)
$29.91 -
MRF208 Motorola NPN Silicon RF Power Transistor 12.5V 220 MHz 10W Matched Pair (2) (NOS)
$91.91Designed for 12.5 Volt large-signal power amplifier applications in communications equipment operating at 220 MHz.
- Specified 12.5 Volt, 220 MHz Characteristics: Output Power= 10 W, Minimum Gain= 8.2 dB
- Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transister damage caused by load mismatch.
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF208MPMade in the USA -
MRF208 Motorola NPN Silicon RF Power Transistor 12.5V 220 MHz 10W (NOS)
$45.91MRF208 Motorola NPN Silicon RF Power Transistor 12. 5V 220 MHz 10 W
Designed for 12.5 Volt large-signal power amplifier applications in communications equipment operating at 220 MHz.
- Specified 12.5 Volt, 220 MHz Characteristics: Output Power= 10 W, Minimum Gain= 8.2 dB
- Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transister damage caused by load mismatch.
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: MRF208Made in the USA -
MRF207 Motorola NPN Silicon RF Power Transistor 12.5V 220 MHz 1.0W (NOS)
$3.91Designed for 12.5 Volt large-signal power amplifier applications in communications equipment operating at 220 MHz.
- Specified 12.5 Volt, 220 MHz Characteristics: Output Power= 1.0 W, Minimum Gain= 8.2 dB
- Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transister damage caused by load mismatch.
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF207 -
MRF1946 Motorola NPN Silicon Power Transistor 30 Watt 10 dB 12.5 Volt 175 MHz (NOS)
$49.91Designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment.
- High Common Emitter Power Gain
- Specified 12.5 V, 175 MHz Performance: Output Power = 30 Watts, Power Gain = 10 dB, Efficiency = 60%
- Diffused Emitter Resistor Ballasting
- Characterized to 220 MHz
- Load Mismatch at High Line and Overdrive Conditions
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF1946 -
MRF176GV Motorola Transistor RF MOSFET 200/150W 500MHz 50V (NOS)
$199.91Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF176GV-MOT -
MRF176GU Motorola Transistor RF MOSFET 200/150W 500MHz 50V (NOS)
$199.91Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF176GU-MOT -
MRF175GU Motorola Transistor 150 Watt 28V 400 MHz (NOS)
$191.91Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
- Guaranteed performance: @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 20 pF typ @ VDS = 28 V
New Old Stock * No longer available for export
MFR: MRF175GU-MOT -
MRF174 Motorola Transistor RF MOSFET 125W 200MHz (NOS)
$79.91Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range, N–Channel enhancement mode MOSFET
- Guaranteed performance at 150 MHz, 28 Vdc, Output power = 125 W, Minimum gain = 9.0 dB, Efficiency = 50% (min.)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Low noise figure — 3.0 dB typ. at 2.0 A, 150 MHz
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF174-MOT -
MRF173CQ Motorola RF MOSFET Transistor 80W 175MHz 28V (NOS)
$74.91Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF173CQ-MOT -
MRF164W Motorola Power Field Effect Transistor 28 Volt (NOS)
$69.91Designed primarily for wideband large-scale output and driver stages to 500MHz.
- Guaranteed Performance at 400 MHZ, 28 Vdc
- Output Power: 20 W
- Minimum Gain: 15dB
- Push-Pull Configuration Reduces Even Bumbered Harmonics
- Excellent Thermal Stability, suited for Class A Operation
- Allows Manual Gain Control, ALC and Modulation Techniques
- 30:1 VSWR
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF164W -
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MRF15030 Motorola RF Power Transistor 30W 1490 MHz 26V (NOS)
$79.91New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF15030Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. Specified 26 V 1490 MHz.
Class AB Characteristics: Output Power, 30 W Gain, 9 dB Min @ 30 Watts (PEP) Efficiency, 30% Min @ 30 Watts (PEP) Intermodulation Distortion. 30 dBc Max @ 30 Watts (PEP)
Made in the USA -
MRF148 Motorola RF MOSFET Transistor 30 Watt 30 MHz 50 Volt (NOS)
$69.91N-Channel enhancement-mode RF power field-effect transister designed for power amplifier applications in indistrial, commercial, and amateur radio equipment to 175 MHz.
- Superior High Order IMD
- Specified 50 Volts, 30 MHz Charachteristics: Output Power= 30 Watts, Power Gain= 18dB (Typ), Efficiency= 40% (Typ)
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF148 -
MRF141 Motorola Transistor RF Power FET 150W 175MHz 28V (NOS)
$79.91 -
MRF140 Motorola Transistor 150W 28V 150 MHz Matched Pair (2) (NOS)
$289.91Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
- Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
- Superior high order IMD
- IMD(d3) (150 W PEP): –30 dB (Typ.)
- IMD(d11) (150 W PEP): –60 dB (Typ.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF140-MP-MOTMade in the USA -
MRF140 Motorola Transistor 150 Watt 28V 150 MHz (NOS)
$145.91Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
- Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
- Superior high order IMD
- IMD(d3) (150 W PEP): –30 dB (Typ.)
- IMD(d11) (150 W PEP): –60 dB (Typ.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF140-MOTMade in the USA -
MRF137 Motorola Transistor 30 Watt 28V 400 MHz (NOS)
$59.91 -
MRF136Y Motorola Transistor 30 Watt 28V 400 MHz (NOS)
$94.91Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode
- Guaranteed 28 volt, 150 MHz performance Output power = 30 Watts Broadband gain = 14 dB (Typ.) Efficiency = 54% (Typ.)
- Small– and large–signal characterization
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Space saving package for push–pull circuit applications
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF136Y-MOT -
MRF136 Motorola Transistor 15 Watt 28V 400 MHz (NOS)
$115.91Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in single-ended configuration N–Channel enhancement mode
- Guaranteed 28 volt, 150 MHz performance Output power = 15 watts Narrowband gain = 16 dB (Typ.) Efficiency = 60% (Typ.)
- Small– and large–signal characterization
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Excellent thermal stability, ideally suited for Cass A operation
- Facilitates manual gain control, ALC and modulation techniques
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF136-MP -
MRF136 Motorola Transistor 15 Watt 28V 400 MHz (NOS)
$57.91 -
MRF1150MA Motorola Microwave Pulse Power Transistor 150W 50V 1090 MHz (NOS)
$39.91 -
MRF455 M/A-COM NPN Silicon Power Transistor Matched Pair 60 Watt 14-30 MHz 12.5v 0.380" Flange
$116.91 -
MRF455 M/A-COM NPN Silicon Power Transistor 60 Watt 14-30 MHz 12.5v 0.380" Flange
$57.91 -
MRF454 M/A-COM Power Transistor NPN Silicon Matched Pair (2) 80W 30MHz 12.5V
$155.91 -
MRF454 M/A-COM NPN Silicon Power Transistor 80W 30 MHz 12.5V
$77.91 -
MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V Matched Pair (2)
$279.91Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz characteristics: Output power = 250 W, Minimum gain = 12 dB, Efficiency = 45%
- Intermodulation distortion @ 250 W (PEP) — IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 3:1 VSWR
ROHS Compliant.
MFR: M/A-COM
SKU: MRF448MP-MA -
MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V
$139.91Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz characteristics: Output power = 250 W, Minimum gain = 12 dB, Efficiency = 45%
- Intermodulation distortion @ 250 W (PEP) — IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 3:1 VSWR
ROHS Compliant.
MRF: M/A-COM
SKU: MRF448-MA -
MRF429 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 50 V
$212.91Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP), Minimum gain = 13 dB, Efficiency = 45%
- Intermodulation distortion @ 150 W (PEP) — IMD = –32 dB (Max)
- Diffused emitter resistors for superior ruggedness
- 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW
MRF:M/A-COM
SKU: MRF429MP-MA -
MRF429 M/A-COM NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V
$105.91 -
MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V Matched Pair (2)
$257.91Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
- Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW
MFR: MA/COM
SKU: MRF428MP-MA -
MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V
$128.91 As low as: $122.46Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
- Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW
MRF: M/A-COM
SKU: MRF428-MA -
MRF426 M/A-COM NPN Silicon Power Transistor Matched Pair 25W (PEP) 30MHz 28V
$79.91Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.
- Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
- Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Class A and AB characterization
- BLX 13 equivalent
MFR: M/A-COM
SKU: MRF426MP-MA -
MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V
$39.91Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.
- Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
- Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Class A and AB characterization
- BLX 13 equivalent
MFR: M/A-COM
SKU: MRF426-MA -
MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V
$119.91 As low as: $113.91Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: MA/COM
-
MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)
$219.91Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MRF: M/A-COM
SKU: MRF421MP-MA -
MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V
$109.91Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Min Frequency: 1 MHz
- Gain: 10 dB
- Bias Voltage: 12.5 V
- Max Frequency: 30 MHz
- Efficiency: 40 %
- Pout: 100 W
MFR: M/A-COM
SKU: MRF421-MA -
MRF392 M/A-COM Controlled “Q” Broadband Power Transistor 125W 30 to 500MHz 28V
$106.91 As low as: $96.91Made with original Motorola Die
Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.
- Specified 28 V, 400 MHz characteristics — Output power = 125 W, Typical gain = 10 dB, Efficiency = 55% (typ.)
- Built–in input impedance matching networks for broadband operation
- Push–pull configuration reduces even numbered harmonics
- Gold metallization system for high reliability
- 100% tested for load mismatch
MRF: M/A-COM
SKU: MRF392-MA -
MRF327 M/A-COM Controlled “Q” Broadband Power Transistor, 80W 100 to 500MHz 28V
$48.91 As low as: $46.91Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.
- Guaranteed performance @ 400 MHz, 28 Vdc; Output power = 80 W over 225 to 400 MHz Band, Minimum gain = 7.3 dB @ 400 MHz
- Built–in matching network for broadband operation using double match technique
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
- Characterized for 100 =8 500 MHz
MRF: M/A-COM
SKU: MRF327-MA -
MRF323 M/A-COM Transistor 20 watt 28v 400 MHz
$107.91Made with original Motorola Die
- Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 V: Output power = 20 W, Power gain = 10 dB min., Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input impedance
MFR: M/A-COM
SKU: MRF323-MA -
MRF321 M/A-COM NPN Silicon Power Transistor 10W 400MHz 28V (NOS)
$103.91 As low as: $72.95Made with original Motorola Die
Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 Vdc; Output power = 10 W, Power gain = 12 dB min., Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input Impedance
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF321-MA -
MRF317 M/A-COM NPN Silicon Power Transistor 100W 30-200MHz 28V
$97.91 As low as: $93.01Designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 100 W, Minimum gain = 9.0 dB
- Built–in matching network for broadband operation
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- High output saturation power — ideally suited for 30 W carrier/120 W
- Peak AM amplifier service
- Guaranteed performance in broadband test fixture
MFR: M/A-COM
SKU: MRF317-MA -
MRF316 M/A-COM NPN Silicon Power Transistor 80W 3.0-200MHz 28V
$63.91 As low as: $60.71Designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 80 W, Minimum gain = 10 dB
- Built–in matching network for broadband operation
- 100% tested for load mismatch at all phase angles with: 30:1 VSWR
- Gold metallization system for high reliability applications
MFR: MA/COM
SKU: MRF316-MA -
MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V Matched Pair (2)
$97.91Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
MRF: MA/COM
SKU: MRF314MP-MA -
MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V
$48.91 As low as: $46.46Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
MRF: M/A-COM
SKU: MRF314-MA -
MRF313 M/A-COM NPN Silicon High-Frequency Transistor 1.0W 400MHz 28V (NOS)
$34.91Designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio.
- Specified 28 V, 400 MHz characteristics — Output power = 1.0 W, Power gain = 15 dB min., Efficiency = 45% typ.
- Emitter ballast and low current density for improved MTBF
- Common emitter for improved stability
New Old Stock * No longer available for export
MRF: M/A-COM
SKU: MRF313-MA -
MRF275L M/A-COM RF MOSFET Transistor 100W 500MHz 28V
$127.91 As low as: $121.51Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode
- Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 100 W, Power gain — 8.8 dB typ., Efficiency — 55% typ.
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 17 pF typ. @ VDS = 28 V
MFR: M/A-COM
SKU: MRF275L-MA -
MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V
$243.91Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. N-Channel enhancement mode
- Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power gain — 10 dB (min.), Efficiency — 50% (min.)
- 100% tested for load mismatch at all phase angles with VSWR 30:1
- Overall lower capacitance @ 28 V: Ciss — 135 pF, Coss — 140 pF, Crss — 17 pF
- Simplified AVC, ALC and modulation
- Typical data for power amplifiers in industrial and commercial applications:
- Typical performance @ 400 MHz, 28 Vdc: Output power — 150 W, Power gain — 12.5 dB, Efficiency — 60%
- Typical performance @ 225 MHz, 28 Vdc: Output power — 200 W, Power gain — 15 dB, Efficiency — 65%
MRF: M/A-COM
MRF275G-MA -
MRF177 M/A-COM RF MOSFET Transistor 100W 400MHz 28V
$89.91 As low as: $85.41Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. N–Channel enhancement mode MOSFET.
- Typical performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%
- Low thermal resistance
- Low Crss — 10 pF typ. @ VDS = 28 V
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
- Excellent thermal stability; suited for Class A operation
MRF: M/A-COM
SKU: MRF177-MA -
MRF176GV M/A-COM RF MOSFET Transistor 200/150W 500MHz 50V
$179.91 As low as: $139.95Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
MFR: M/A-COM
SKU: MRF176GV-MA -
MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V
$179.91Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
MFR: M/A-COM
SKU: MRF176GU-MA -
MRF175LU M/A-COM Transistor RF MOSFET 100W 400MHz 28V (NOS)
$74.91 As low as: $70.95Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF175LU-MA -
MRF175GV M/A-COM Transistor 200 watt 28v 225 MHz (NOS)
$215.91Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
- Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),
- Output power — 200 W, Power gain — 14 dB typical, Efficiency — 65% typical
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 20 pF typical @ VDS = 28 V
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF175GV-MA -
MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz
$191.91 As low as: $182.31Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
- Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 20 pF typ @ VDS = 28 V
MRF: M/A-COM
SKU: MRF175GU-MA -
MRF174 M/A-COM Transistor RF MOSFET 125W 200MHz
$63.91Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range, N–Channel enhancement mode MOSFET
- Guaranteed performance at 150 MHz, 28 Vdc, Output power = 125 W, Minimum gain = 9.0 dB, Efficiency = 50% (min.)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Low noise figure — 3.0 dB typ. at 2.0 A, 150 MHz
MFR: M/A-COM
SKU: MRF174-MA -
MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz Matched Pair (2)
$97.91Out of stock
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET
MRF: M/A-COM
SKU: MRF173MP-MA -
MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz
$48.91 As low as: $44.14Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.
MFR: M/A-COM
SKU: MRF173-MA -
MRF173CQ M/A-COM RF MOFSET Transistor 80W 175MHz 28V
$69.91Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.
MRF: M/A-COM
SKU: MRF173CQ-MA -
MRF171A M/A-COM Transistor RF MOSFET 45W 150MHz 28V (NOS)
$53.91Designed primarily for wideband large–signal output and driver stages from 30–200 MHz, N–Channel enhancement mode MOSFET
- Guaranteed performance at 150 MHz, 28 Vdc, Output power = 45 W, Power gain = 17 dB (min), Efficiency = 60% (min)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Low Crss – 8 pF @ VDS = 28 V
- Gold top metal, Typical data for power amplifier applications in industrial, commercial and amateur radio equipment
- Typical performance at 30 MHz, 28 Vdc, Output power = 30 W (PEP), Power gain = 20 dB (typ.), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (typ.)
Parts we have available are early version just after Motorola sold to M/A-COM. All parts in stock are produced with original Motorola die.
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF171A-MA -
MRF166W M/A-COM Transistor RF MOSFET 40W 500MHz 28V
$109.91 As low as: $99.19 -
MRF166C M/A-COM RF MOSFET Transistor 20W 500MHz 28V
$51.91 As low as: $49.31Designed primarily for wideband large–signal output and driver from 30–500MHz, N–Channel enhancement mode MOSFET
- MRF166C — Guaranteed performance at 500 MHz, 28 Vdc, Output power = 20 W, Gain = 13.5 dB, Efficiency = 50%
- Replacement for industry standards such as MRF136, V2820, BLF244, SD1902, and ST1001
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Facilitates manual gain control, ALC and modulation techniques
- Excellent thermal stability, ideally suited for Class A operation
- Low Crss — 4.0 pF @ VDS = 28 V
MFR: M/A-COM
SKU: MRF166C-MA -
MRF160 M/A-COM RF MOSFET Broadband Power FET 4W to 500MHz 28V
$46.91 As low as: $44.56Designed primarily for wideband large–signal output and driver from 30–500 MHz.
N–Channel enhancement mode MOSFET- Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55% (typ.)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% Tested for load mismatch at all phase angles with 30:1 VSWR
- Low Crss – 0.8 pF Typical at VDS = 28 V
MFR: M/A-COM
SKU: MRF160-MA -
MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)
$35.91 As low as: $31.91Designed for wideband large signal amplifier and oscillator applications to 500MHz N–Channel enhancement mode
- Guaranteed 28 volt, 500 MHz performance Output power = 2.0 watts Minimum gain = 16 dB (Min.) Efficiency = 55% (Typ.)
- Facilitates manual gain control, ALC and modulation techniques
- Tested for load mismatch at all phase angles with 30:1 VSWR
- Excellent thermal stability and ideally suited for Class A operation
MFR: M/A-COM
SKU: MRF158-MA -
MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V
$869.91The MRF154 transistor is commonly used in a variety of RF power amplifier applications, such as in radio and television broadcasting, wireless communication systems, and radar systems. It is also used in industrial applications, such as in welding equipment and plasma generators.
The MRF154 transistor is a high-quality and reliable component that offers excellent performance in a wide range of RF power applications. Its high power rating, frequency range, and voltage rating make it a popular choice for use in a variety of high-power applications.
Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range.
N–Channel enhancement mode MOSFET.
Specified 50 volts
30 MHz characteristics
Output power = 600 watts
Power gain = 17 dB (typical)
Efficiency = 45% (typical)Not available for export
MFR: M/A-COM
SKU: MRF154-MA -
MRF151 RF Power Field-Effect Transistor Matched Pair (2)150 Watt 50 Volt 175 MHz N-Channel Broadband MOSFET
$159.91Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
Features guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced ReliabilityMRF: MA/COM
SKU: MRF151MP-MA -
MRF151 M/A-COM RF Power Field-Effect MOSFET Transistor 150W 50V 175 MHz N-Channel Broadband
$79.91Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
Features guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced ReliabilityMFR: M/A-COM
SKU: MRF151-MA -
MRF151G Motorola M/A-COM MOSFET Power Transistor 300W 50V 175 MHz Early Version (NOS)
$179.91The MRF151G MA/COM Transistor is an early version, produced with the Motorola die.
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
New Old Stock * No longer available for export
MFR: Motorola M/A-COM USA
SKU: MRF151G-MA-M -
MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET
$118.91Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
• Enhanced thermal performance
• Higher power dissipation Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40% Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced ReliabilityMFR: M/A-COM
SKU: MRF151A-MA -
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)
$307.91TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
MFR: M/A-COM
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MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)
$153.91TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
MFR: M/A-COM
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MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V
$76.91MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COMTMOS Designed primarily for linear large-signal output stages up to 150 MHz.• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
SKU: MRF150-MA
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MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)
$63.91 As low as: $60.71 -
MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V
$69.91 As low as: $64.95Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.
- Guaranteed performance at 30 MHz, 28V: Output power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40%
- Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB
- Low thermal resistance
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF141-MA -
MRF141G M/A-COM RF Power FET 300W 175MHz 28V
$265.91 -
MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)
$249.91Made with original Motorola Die
Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
- Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
- Superior high order IMD
- MD(d3) (150 W PEP): –30 dB (Typ.)
- IMD(d11) (150 W PEP): –60 dB (Typ.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF140-MP-MA -
MRF140 M/A-COM Transistor 150W 28V 150 MHz
$125.91Made with original Motorola Die
Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
- Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
- Superior high order IMD
- MD(d3) (150 W PEP): –30 dB (Typ.)
- IMD(d11) (150 W PEP): –60 dB (Typ.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF140-MA -
MRF137 M/A-COM Transistor 30W 28V 400 MHz
$51.91Designed for wideband large signal output and drive stages Product Image up to 400 MHz range. N–Channel enhancement mode
• Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency — 60% (Typical)
• Small– and large–signal characterization
• Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Low noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniquesLimit, 10 per customer.
MFR: M/A-COM
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MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz
$84.91 As low as: $76.62 -
MRF136 M/A-COM Transistor 15 watt 28v 400 MHz
$36.91 As low as: $35.06Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in single-ended configuration N–Channel enhancement mode
.
• Guaranteed 28 volt, 150 MHz performance Output power = 15 watts Narrowband gain = 16 dB (Typ.) Efficiency = 60% (Typ.)
• Small– and large–signal characterization
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Excellent thermal stability, ideally suited for Cass A operation
• Facilitates manual gain control, ALC and modulation techniquesMFR: M/A-COM
SKU: MRF136-MA -
MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz
$94.91 As low as: $90.16Made with original Motorola Die
Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 Vdc
- Output power = 10 W
- Power gain = 12 dB min.
- Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input Impedance
MRF: M/A-COM
SKU: MRF134-MA -
2SC1969 Mitsubishi NPN Epitaxial Planar Transistor 27 MHz 12V 16W (NOS) (SEE MRF475)
$19.95Out of stock
NPN Epitaxial Planar Transistor 27 MHz 12V 16W
TO-220 Case
New Old Stock * No longer available for export
MFR: Mitsubishi (Original)
SKU: 2SC1969NOTE: The 2SC1969 is no longer in production, and no longer available. The MRF475 is a possible substitute. (SEE MRF475)
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SM724 Polyfet RF Power VDMOS Transistor Matched Pair (2) (Cross for MRF255) (NOS)
$204.91 As low as: $198.95Silicon VDMOS transistor designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
60 Watts Single Ended
New Old Stock * No longer available for export
* This part is a direct cross for MRF255 *
MFR: Polyfet RF Devices
SKU: SM724-MPFor More Information go here
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MRF644 TRW Transistor 470 MH, 25w 12.5v (NOS)
$22.91 -
MRF641 TRW NPN Silicon RF Power Transistor (NOS)
$44.91 -
MRF449A Motorola NPN Silicon Power Transistor Stud Mount 30W 30MHz 12.5V
$39.91 -
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MRF5007 Motorola RF Power Field Effect Mosfet Transistor RF 512 MHz 7.0W 7.5V (NOS)
$31.91 -
MRF422 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 28 V
$219.91 As low as: $157.91Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: MA/COM
SKU: MRF422-MP-MA -
MRF581A Microsemi RF and Microwave Discrete Low Power Transistor (NOS)
$4.91