Search results for '2sc2879 transistor'

NPN Power Transistor TO-3 (NOS)
New Old Stock * No longer available for export
MFR: RCA
SKU: 2N3773-RCA

Data Sheet

RD70HUP2 is a MOSFET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

• High Power and High Efficiency Pout=75Wtyp
• Drain Effi.=64.0%typ @ Vds=12.5V Idq=1.0A Pin=5.0W f=530MHz Pout=84Wtyp
• Drain Effi.=74%typ @ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz
• Integrated gate protection diode.

RoHS Compliant
MFR: Mitsubishi
SKU: RD70HUP2-501

See Data Sheet

This device utilizes emitter ballasting resistors and improved metallization systems to achieve extreme ruggedness under severe operating conditions.

• Designed for VHF mobile and marine transmitters
• Withstands severe mismatch under operating conditions
• Low inductance stripline package
• All leads electrically isolated from stud

New Old Stock * No longer available for export
MFR: Solid State Microwave
SKU: 2N6080-SSM

See DATA SHEET for more information

The 2N2222A is a good inexpensive general purpose NPN transistor for low to moderate power amplification and switching.
Case: 22-03 TO-18
Small Signal Bipolar Transistor
0.8A I(C),
40V V(BR)CEO
1-Element
Gold Leads
New Old Stock * No longer available for export
MFR: National Semiconductor
SKU: 2N2222A-N

See Data Sheet for more Information

RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications 

High power and High Gain:
Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
Integrated gate protection diode

RoHS Compliant
MFR: Mitsubishi
SKU: RD70HVF1C-501

See Data Sheet for more information

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.  4 Transistors in a Matched Set.

• Specified 12.5 V, 30 MHz characteristics — Output power = 60 W, Minimum gain = 13 dB

MFR: M/A-COM
SKU: MRF455MQ-MA

MOSFET Silicon Power Transistor 175MHz - 520MHz 15W
RoHS Compliant
MFR #: RD15HVF1-501
MFR: Mitsubishi, Japan
SKU: RD15HVF1-501

EOL 12/2022

The RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.

The RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.

Will replace the original RD100HHF1-101.

MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
RoHS Compliant
MFR: Mitsubishi
Made in Japan
SKU: RD100HHF1C-501

Data Sheet

2N5397 CDC N-Channel JFET Transistor 15dB min 450 MHz (NOS)

New Old Stock * No longer available for export
MFR: CDC
SKU: 2N5397