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RA60H3847M1A Mitsubishi MOSFET RF Module 378-470 MHz 60w 12.5v

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RA60H3847M1A RF Module, 378-470 MHz, 60 Watt, 12.5v, Metal Cap, Digital TDMA, MFR: Mitsubishi


 


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Details

RA60H3847M1A  Mitsubishi MOSFET RF Module 378-470 MHz 60w 12.5v

The RA60H3847M1A is a 60-watt RF MOS FET (Metal Oxide Semiconductor Field Effect Transistor) Amplifier Module for 12.5-volt digital mobile radios of TDMA that operate in the 378- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOS FET transistors. The output power and drain current increase as the gate voltage increases. At VGG1=3.4V, VGG2=5V, the typical gate currents are 2mA. Metal cap.

This module is designed for TDMA, therefore this module separated the gate terminal of each MOSFET to make Ton/Toff time rapid.

Frequency Range: 378-470 MHz
Vdd: 12.5 V
Power Output:
 60W

Efficiency: 40%
Power Input: 50mW
Case: H2M

MFR: Mitsubishi, Japan

MFR Part #: RA60H3847M1A-501

Additional Information

Featured Product No
Made in the USA No
Manufacturer No
Manufacturer Name Mitsubishi

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