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RD01MUS2B-T113 Transistor, Mitsubishi (Full Tape & Reel) (3000 pieces)

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Quick Overview

RD01MUS2B-T113 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W (3000 piece Tape and Reel), 


MFR: Mitsubishi

Details

RD01MUS2B-T113 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W (3000 piece Tape and Reel)

MFR: Mitsubishi

DESCRIPTION
RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection.

FEATURES
•High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70%Typ @Vdd=7.2V,f=527MHz
•Integrated gate protection diode

APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.

RoHS COMPLIANCE
RD01MUS2B-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)

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