Transistors - RF, Mosfets, Misc.
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MRF175LU M/A-COM Transistor RF MOSFET 100W 400MHz 28V (NOS)
$74.91 As low as: $70.95Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF175LU-MA -
MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V
$179.91Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
MFR: M/A-COM
SKU: MRF176GU-MA -
MRF176GV M/A-COM RF MOSFET Transistor 200/150W 500MHz 50V
$179.91 As low as: $139.95Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
MFR: M/A-COM
SKU: MRF176GV-MA -
MRF177 M/A-COM RF MOSFET Transistor 100W 400MHz 28V
$89.91 As low as: $85.41Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. N–Channel enhancement mode MOSFET.
- Typical performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%
- Low thermal resistance
- Low Crss — 10 pF typ. @ VDS = 28 V
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
- Excellent thermal stability; suited for Class A operation
MRF: M/A-COM
SKU: MRF177-MA -
MRF174 M/A-COM Transistor RF MOSFET 125W 200MHz
$63.91Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range, N–Channel enhancement mode MOSFET
- Guaranteed performance at 150 MHz, 28 Vdc, Output power = 125 W, Minimum gain = 9.0 dB, Efficiency = 50% (min.)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Low noise figure — 3.0 dB typ. at 2.0 A, 150 MHz
MFR: M/A-COM
SKU: MRF174-MA -
MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz Matched Pair (2)
$97.91Out of stock
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET
MRF: M/A-COM
SKU: MRF173MP-MA -
MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz
$48.91 As low as: $44.14Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.
MFR: M/A-COM
SKU: MRF173-MA -
MRF173CQ M/A-COM RF MOFSET Transistor 80W 175MHz 28V
$69.91Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.
MRF: M/A-COM
SKU: MRF173CQ-MA -
MRF166C M/A-COM RF MOSFET Transistor 20W 500MHz 28V
$51.91 As low as: $49.31Designed primarily for wideband large–signal output and driver from 30–500MHz, N–Channel enhancement mode MOSFET
- MRF166C — Guaranteed performance at 500 MHz, 28 Vdc, Output power = 20 W, Gain = 13.5 dB, Efficiency = 50%
- Replacement for industry standards such as MRF136, V2820, BLF244, SD1902, and ST1001
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Facilitates manual gain control, ALC and modulation techniques
- Excellent thermal stability, ideally suited for Class A operation
- Low Crss — 4.0 pF @ VDS = 28 V
MFR: M/A-COM
SKU: MRF166C-MA -
MRF160 M/A-COM RF MOSFET Broadband Power FET 4W to 500MHz 28V
$46.91 As low as: $44.56Designed primarily for wideband large–signal output and driver from 30–500 MHz.
N–Channel enhancement mode MOSFET- Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55% (typ.)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% Tested for load mismatch at all phase angles with 30:1 VSWR
- Low Crss – 0.8 pF Typical at VDS = 28 V
MFR: M/A-COM
SKU: MRF160-MA