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Transistors - RF, Mosfets, Misc.

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  1. MRF175LU M/A-COM Transistor RF MOSFET 100W 400MHz 28V (NOS)

    MRF175LU M/A-COM Transistor RF MOSFET 100W 400MHz 28V (NOS)

    Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF175LU-MA

  2. MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V

    MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V

    $179.91

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    MFR: M/A-COM
    SKU: MRF176GU-MA

  3. MRF176GV M/A-COM  RF MOSFET Transistor 200/150W 500MHz 50V

    MRF176GV M/A-COM RF MOSFET Transistor 200/150W 500MHz 50V

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    MFR: M/A-COM
    SKU: MRF176GV-MA

  4. MRF177 M/A-COM RF MOSFET Transistor 100W 400MHz 28V

    MRF177 M/A-COM RF MOSFET Transistor 100W 400MHz 28V

    Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. N–Channel enhancement mode MOSFET.

    • Typical performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%
    • Low thermal resistance
    • Low Crss — 10 pF typ. @ VDS = 28 V
    • Ruggedness tested at rated output power
    • Nitride passivated die for enhanced reliability
    • Excellent thermal stability; suited for Class A operation

    MRF:  M/A-COM
    SKU: MRF177-MA

  5. MRF174 M/A-COM Transistor RF MOSFET 125W 200MHz

    MRF174 M/A-COM Transistor RF MOSFET 125W 200MHz

    $63.91

    Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range, N–Channel enhancement mode MOSFET

    • Guaranteed performance at 150 MHz, 28 Vdc, Output power = 125 W, Minimum gain = 9.0 dB, Efficiency = 50% (min.)
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Low noise figure — 3.0 dB typ. at 2.0 A, 150 MHz

    MFR: M/A-COM
    SKU: MRF174-MA

  6. MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz Matched Pair (2)

    MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz Matched Pair (2)

    $97.91

    Out of stock

    Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET

    MRF:  M/A-COM
    SKU: MRF173MP-MA

  7. MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz

    MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz

    Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.

    MFR: M/A-COM
    SKU: MRF173-MA

  8. MRF173CQ M/A-COM RF MOFSET Transistor 80W 175MHz 28V

    MRF173CQ M/A-COM RF MOFSET Transistor 80W 175MHz 28V

    $69.91

    Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.  N–Channel enhancement mode MOSFET.

    MRF: M/A-COM
    SKU: MRF173CQ-MA

  9. MRF166C M/A-COM RF MOSFET Transistor 20W 500MHz 28V

    MRF166C M/A-COM RF MOSFET Transistor 20W 500MHz 28V

     Designed primarily for wideband large–signal output and driver from 30–500MHz, N–Channel enhancement mode MOSFET

    • MRF166C — Guaranteed performance at 500 MHz, 28 Vdc, Output power = 20 W, Gain = 13.5 dB, Efficiency = 50%
    • Replacement for industry standards such as MRF136, V2820, BLF244, SD1902, and ST1001
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Facilitates manual gain control, ALC and modulation techniques
    • Excellent thermal stability, ideally suited for Class A operation
    • Low Crss — 4.0 pF @ VDS = 28 V

    MFR: M/A-COM
    SKU: MRF166C-MA

  10. MRF160 M/A-COM  RF MOSFET Broadband Power FET 4W to 500MHz 28V

    MRF160 M/A-COM RF MOSFET Broadband Power FET 4W to 500MHz 28V

    Designed primarily for wideband large–signal output and driver from 30–500 MHz.
    N–Channel enhancement mode MOSFET

    • Guaranteed 28 V, 500 MHz performance  Output power = 4.0 W  Gain = 16 dB (min.)  Efficiency = 55% (typ.)
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques
    • 100% Tested for load mismatch at all phase angles with 30:1 VSWR
    • Low Crss – 0.8 pF Typical at VDS = 28 V

    MFR: M/A-COM
    SKU: MRF160-MA

Items 11 to 20 of 394 total

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