Transistors - RF, Mosfets, Misc.

Designed for wideband large signal amplifier and oscillator  applications to 500MHz  N–Channel enhancement mode

• Guaranteed 28 volt, 500 MHz performance  Output power = 2.0 watts  Minimum gain = 16 dB (Min.)  Efficiency = 55% (Typ.)
• Facilitates manual gain control, ALC and modulation techniques
• Tested for load mismatch at all phase angles with 30:1 VSWR
• Excellent thermal stability and ideally suited for Class A operation

MFR: M/A-COM
SKU: MRF158-MA

The MRF154 transistor is commonly used in a variety of RF power amplifier applications, such as in radio and television broadcasting, wireless communication systems, and radar systems. It is also used in industrial applications, such as in welding equipment and plasma generators.

The MRF154 transistor is a high-quality and reliable component that offers excellent performance in a wide range of RF power applications. Its high power rating, frequency range, and voltage rating make it a popular choice for use in a variety of high-power applications.

Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range.  
N–Channel enhancement mode MOSFET.
Specified 50 volts
30 MHz characteristics
Output power = 600 watts  
Power gain = 17 dB (typical)  
Efficiency = 45% (typical)

Not available for export
MFR: M/A-COM
SKU: MRF154-MA

Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

Features guaranteed Performance at 30 MHz, 50 V:

• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability

MFR: M/A-COM
SKU: MRF151-MA

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz, N–Channel enhancement mode MOSFET

• Guaranteed performance at 150 MHz, 28 Vdc, Output power = 45 W, Power gain = 17 dB (min), Efficiency = 60% (min)
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Low Crss – 8 pF @ VDS = 28 V
• Gold top metal, Typical data for power amplifier applications in industrial, commercial and amateur radio equipment
• Typical performance at 30 MHz, 28 Vdc, Output power = 30 W (PEP), Power gain = 20 dB (typ.), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (typ.)

Parts we have available are early version just after Motorola sold to M/A-COM.  All parts in stock are produced with original Motorola die. 

New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF171A-MA

Designed primarily for wideband large-scale output and driver stages to 500MHz.

• Guaranteed Performance at 400 MHZ, 28 Vdc
• Output Power: 20 W
• Minimum Gain: 15dB
• Push-Pull Configuration Reduces Even Bumbered Harmonics
• Excellent Thermal Stability, suited for Class A Operation
• Allows Manual Gain Control, ALC and Modulation Techniques
• 30:1 VSWR

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF164W

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters.

• Guaranteed Performance @ 1090 MHz, 50 Vdc: Output Power = 150 Watts Peak, Minimum Gain = 7.8 dB

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF1150MA

Designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment.

• High Common Emitter Power Gain
• Specified 12.5 V, 175 MHz Performance: Output Power = 30 Watts, Power Gain = 10 dB, Efficiency = 60%
• Diffused Emitter Resistor Ballasting
• Characterized to 220 MHz
• Load Mismatch at High Line and Overdrive Conditions

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF1946

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF176GU-MOT

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

• Guaranteed performance: @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
• 100% ruggedness tested at rated output power
• Low thermal resistance
• Low Crss — 20 pF typ @ VDS = 28 V

New Old Stock * No longer available for export
MFR: MRF175GU-MOT