Transistors - RF, Mosfets, Misc.
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2SC2097H Mitsubishi NPN Epitaxial Planar Transistor 30 MHz 13.5V 75W Matched Pair (2) (NOS)
$124.91 -
2SC2133 Mitsubishi NPN Epitaxial Planar Transistor 30W 28V 220 MHz (NOS)
$99.95 As low as: $84.95 -
2SC2905 Mitsubishi NPN Epitaxial Planar Transistor 520 MHz 12.5V 45W Matched Pair (2) (NOS)
$69.91 -
RD70HHF1 Mitsubishi Silicon MOSFET Power Transistor 70W 30 MHz 12.5V (NOS)
$59.91DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
FEATURES
High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
RoHS COMPLIANT
RD70HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.New Old Stock * No longer available for export * End Of Life 2017
MFR: Mitsubishi, Japan
SKU: RD70HHF1 -
RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V
$54.91 As low as: $47.08The RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.
The RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.
MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
RoHS Compliant
MFR: Mitsubishi, Japan
SKU: RD100HHF1C-501 -
2SC2630 Mitsubishi NPN Epitaxial Planar Transistor 175 MHz 12.5V 50W Matched Pair (2) (NOS)
$53.91 -
RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V
$49.91 As low as: $42.79 -
RD70HVF1-101 Mitsubishi Transistor 70 Watt 175 MHz 12.5V (NOS)
$47.91The RD70HVF1-101 is a Mitsubishi RF power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF frequency range, with a frequency range of 136-174 MHz.
The RD70HVF1-101 transistor is a high-performance and reliable component that offers excellent performance in a wide range of VHF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.
Silicon MOSFET Power Transistor RoHS Compliant 175MHz 70W 520MHz 50W (NOS)
MFR #: RD70HVF1-101
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD70HVF1See Data Sheet for more information
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RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W
$43.91The RD70HVF1C-501 is a Mitsubishi silicon MOSFET power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF and UHF frequency ranges, with a frequency range of 136-174 MHz and 400-520 MHz, respectively.
The RD70HVF1C-501 transistor is a high-performance and reliable component that offers excellent performance in a wide range of VHF and UHF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.
RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications
High power and High Gain:
Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
Integrated gate protection diodeRoHS Compliant
MFR: Mitsubishi
SKU: RD70HVF1C-501See Data Sheet for more information
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2SC2539 Mitsubishi NPN Epitaxial Planar Transistor 175 MHz 13.5V 14W (NOS)
$42.91
