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  1. MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V Matched Pair (2)

    MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V Matched Pair (2)

    $279.91

    Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    • Specified 50 V, 30 MHz characteristics: Output power = 250 W, Minimum gain = 12 dB, Efficiency = 45% 
    • Intermodulation distortion @ 250 W (PEP) — IMD = –30 dB (max)
    • 100% tested for load mismatch at all phase angles with 3:1 VSWR

    ROHS Compliant.
    MFR: M/A-COM
    SKU: MRF448MP-MA

  2. MRF450A Motorola NPN Silicon Power Transistor Stud-Mount 50W 30 MHz 12.5V Matched Quad (4) (NOS)

    MRF450A Motorola NPN Silicon Power Transistor Stud-Mount 50W 30 MHz 12.5V Matched Quad (4) (NOS)

    $279.91

    Designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics: Output power = 50 W, Minimum gain = 11 dB, Efficiency = 50% 
    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF450AMQ
     
     
  3. SRF3662 Motorola Transistor 12.5V 100W Matched Pair (2) (NOS)

    SRF3662 Motorola Transistor 12.5V 100W Matched Pair (2) (NOS)

    $279.91

    Transistor 12.5 Volts 100 Watts
    Matched Pair (2)
    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: SRF3662MP

  4. 2SC2915 Transistor, NEC

    2SC2915 Transistor, NEC

    $275.00

    2SC2915 Transistor, NEC  No longer available for Export, (NOS)

  5. MRF428 Motorola NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V Matched Pair (2) (NOS)

    MRF428 Motorola NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V Matched Pair (2) (NOS)

    $269.91

    Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    • Specified 50 V, 30 MHz Characteristics —  Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
    • Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW

    New Old Stock * No longer available for export
    MFR: Motorola 
    SKU: MRF428MP-MOT

  6. BLF278 NXP Semiconductors VHF Push/Pull Power MOS Transistor (NOS)

    BLF278 NXP Semiconductors VHF Push/Pull Power MOS Transistor (NOS)

    $269.91

    New Old Stock * No longer available for export
    MFR: NXP Semiconductors, Philippines
    SKU: BLF278-NXP

  7. MRF141G M/A-COM RF Power FET 300W 175MHz 28V

    MRF141G M/A-COM RF Power FET 300W 175MHz 28V

    $265.91

    • Ruggedness tested at rated output power
    • Nitride passivated die for enhanced reliability
    • Operating Frequency: 175 MHz
    • Gain: 12 Db
    • Output Power: 300 W

    MFR: MA/COM
    SKU: MRF141G-MA

  8. MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V Matched Pair (2)

    MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V Matched Pair (2)

    $257.91

    Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    • Specified 50 V, 30 MHz Characteristics —  Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
    • Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW

    MFR: MA/COM
    SKU: MRF428MP-MA

  9. MRF492A Motorola NPN Silicon RF Power Transistor Stud Mount 50 MHz 70W 12.5V Matched Pair (2) (NOS)

    MRF492A Motorola NPN Silicon RF Power Transistor Stud Mount 50 MHz 70W 12.5V Matched Pair (2) (NOS)

    $257.91

    NPN Silicon RF Power Transistor Stud Mount 50 MHz 70W 12.5V
    Matched Pair (2)
    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF492AMP

  10. 2SC2290 Toshiba Transistors Matched Quad (4) (Early Version) (NOS)

    2SC2290 Toshiba Transistors Matched Quad (4) (Early Version) (NOS)

    $251.91

    The 2SC2290 is a bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a high-frequency transistor commonly used in RF power amplifier circuits.

    The early version of the 2SC2290 transistor was a single transistor package. This version was commonly used in a variety of applications, such as in citizen band (CB) radios, linear amplifiers, and other high-frequency communication systems.

    The 2SC2290 transistor is a high-quality and reliable component that offers excellent performance in a wide range of high-frequency applications. Its high power output, frequency range, and compact design make it a popular choice for use in various RF power amplifier circuits.

    Transistors Matched Quad (4) (Early Version)
    Silicon NPN Epitaxial Planar TypeTransistors
    New Old Stock * No longer available for export
    MFR: Toshiba, Japan
    SKU: 2SC2290-MQ

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  29. Mitsubishi (LIMITED QUANTITY AVAILABLE)
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  54. Toshiba
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  56. Vishay Siliconix
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1-800-RFPARTS (1-800-737-2787)  1-760-744-0700, #1

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