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  1. F2012 Polyfet Silicon Gate RF Power VDMOS Transistor 10 Watts Single Ended 28 Volts 10dB Gain 1 GHz (NOS)

    F2012 Polyfet Silicon Gate RF Power VDMOS Transistor 10 Watts Single Ended 28 Volts 10dB Gain 1 GHz (NOS)

    $35.91

    Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

    MFR: Polyfet
    New Old Stock * No longer available for export
    Matched Pairs available upon request.
    SKU: F2012

1 Item(s)