MRF200 Series
MRF224M3, MRF247MP, MRF247 TRW, MRF255 Transistor, 12v tmos, Sub sm724mp, MRF262 Transistor, 12 Volt, Sub for 2SC1972, MRF248MP NPN Silicon RF Transistor, Matched Pair, 12.5 V, 175 MHz, 80 W (SRF3897), Motorola, MRF2628 NPN Silicon Power Transistor, 12.5 V, 175 MHz, 15 W, Motorola, MRF226 NPN Silicon RF Power Transistor, 12.5 V, 225 MHz, 13 W, Motorola, MRF261 NPN Silicon RF Power Transistor, 12.5 V, 175 MHz, 10 W, Motorola
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MRF275L M/A-COM RF MOSFET Transistor 100W 500MHz 28V
$127.91 As low as: $121.51Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode
- Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 100 W, Power gain — 8.8 dB typ., Efficiency — 55% typ.
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 17 pF typ. @ VDS = 28 V
MFR: M/A-COM
SKU: MRF275L-MA -
MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V
$243.91Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. N-Channel enhancement mode
- Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power gain — 10 dB (min.), Efficiency — 50% (min.)
- 100% tested for load mismatch at all phase angles with VSWR 30:1
- Overall lower capacitance @ 28 V: Ciss — 135 pF, Coss — 140 pF, Crss — 17 pF
- Simplified AVC, ALC and modulation
- Typical data for power amplifiers in industrial and commercial applications:
- Typical performance @ 400 MHz, 28 Vdc: Output power — 150 W, Power gain — 12.5 dB, Efficiency — 60%
- Typical performance @ 225 MHz, 28 Vdc: Output power — 200 W, Power gain — 15 dB, Efficiency — 65%
MRF: M/A-COM
MRF275G-MA