1-800-RFPARTS (1-800-737-2787) 1-760-744-0700 (USA) ORDERS: rfp@rfparts.com 435 S PACIFIC ST SAN MARCOS, CA 92078

MRF100 Series

MRF163, MRF162, MRF171, MRF1001A, MRF1015MB, MRF1090MA, MRF154MP, MRF166C-MOT, MRF138, MRF1150MB Transistor, 12 volt, MRF157-MOT Transistor, Motorola, 600 watt, 50v, 80 MHz, MRF140-MOT Transistor, 150 watt, 28v, 150 MHz, Motorola, MRF175GV-MA Transistor, 200 watt, 28v, 225 MHz, M/A-COM, MRF151-MOT Transistor, 50 volt motorola, MRF134-MOT Transistor, 28 volt motorola, MRF173-MA Transistor, 80 watt, 28v, 175 MHz, M/A-COM

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  1. MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V

    MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V

    $869.91

    The MRF154 transistor is commonly used in a variety of RF power amplifier applications, such as in radio and television broadcasting, wireless communication systems, and radar systems. It is also used in industrial applications, such as in welding equipment and plasma generators.

    The MRF154 transistor is a high-quality and reliable component that offers excellent performance in a wide range of RF power applications. Its high power rating, frequency range, and voltage rating make it a popular choice for use in a variety of high-power applications.

    Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range.  
    N–Channel enhancement mode MOSFET.
    Specified 50 volts
    30 MHz characteristics
    Output power = 600 watts  
    Power gain = 17 dB (typical)  
    Efficiency = 45% (typical)

    Not available for export
    MFR: M/A-COM
    SKU: MRF154-MA

  2. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

    $307.91

    Out of stock

    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    MFR: M/A-COM

  3. MRF141G M/A-COM RF Power FET 300W 175MHz 28V

    MRF141G M/A-COM RF Power FET 300W 175MHz 28V

    $265.91

    • Ruggedness tested at rated output power
    • Nitride passivated die for enhanced reliability
    • Operating Frequency: 175 MHz
    • Gain: 12 Db
    • Output Power: 300 W

    MFR: MA/COM
    SKU: MRF141G-MA

  4. MRF175GV M/A-COM Transistor 200 watt 28v 225 MHz (NOS)

    MRF175GV M/A-COM Transistor 200 watt 28v 225 MHz (NOS)

    $215.91

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    • Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),
    • Output power — 200 W, Power gain — 14 dB typical, Efficiency — 65% typical
    • 100% ruggedness tested at rated output power
    • Low thermal resistance
    • Low Crss — 20 pF typical @ VDS = 28 V

    New Old Stock * No longer available for export 
    MFR: M/A-COM
    SKU: MRF175GV-MA

  5. MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz

    MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    • Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
    • 100% ruggedness tested at rated output power
    • Low thermal resistance
    • Low Crss — 20 pF typ @ VDS = 28 V

    MRF: M/A-COM
    SKU: MRF175GU-MA

  6. MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V

    MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V

    $179.91

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    MFR: M/A-COM
    SKU: MRF176GU-MA

  7. MRF176GV M/A-COM  RF MOSFET Transistor 200/150W 500MHz 50V

    MRF176GV M/A-COM RF MOSFET Transistor 200/150W 500MHz 50V

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    MFR: M/A-COM
    SKU: MRF176GV-MA

  8. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

    $153.91

    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    MFR: M/A-COM

  9. MRF140 M/A-COM Transistor 150W 28V 150 MHz

    MRF140 M/A-COM Transistor 150W 28V 150 MHz

    $125.91

    Made with original Motorola Die

    Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

    • Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
    • Superior high order IMD
    • MD(d3) (150 W PEP): –30 dB (Typ.)
    • IMD(d11) (150 W PEP): –60 dB (Typ.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: M/A-COM
    SKU: MRF140-MA

  10. MRF166W M/A-COM Transistor RF MOSFET 40W 500MHz 28V

    MRF166W M/A-COM Transistor RF MOSFET 40W 500MHz 28V

    Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz, N–Channel enhancement mode MOSFET

    MFR: M/A-COM
    SKU: MRF166W-MA

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