MRF100 Series
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MRF15030 Motorola RF Power Transistor 30W 1490 MHz 26V (NOS)
$79.91New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF15030Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. Specified 26 V 1490 MHz.
Class AB Characteristics: Output Power, 30 W Gain, 9 dB Min @ 30 Watts (PEP) Efficiency, 30% Min @ 30 Watts (PEP) Intermodulation Distortion. 30 dBc Max @ 30 Watts (PEP)
Made in the USA -
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)
$307.91Out of stock
TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
MFR: M/A-COM
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MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)
$153.91TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
MFR: M/A-COM
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MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V
$76.91MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COMTMOS Designed primarily for linear large-signal output stages up to 150 MHz.• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
SKU: MRF150-MA
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MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)
$63.91 As low as: $60.71 -
MRF148 Motorola RF MOSFET Transistor 30 Watt 30 MHz 50 Volt (NOS)
$69.91N-Channel enhancement-mode RF power field-effect transister designed for power amplifier applications in indistrial, commercial, and amateur radio equipment to 175 MHz.
- Superior High Order IMD
- Specified 50 Volts, 30 MHz Charachteristics: Output Power= 30 Watts, Power Gain= 18dB (Typ), Efficiency= 40% (Typ)
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF148 -
MRF141G M/A-COM RF Power FET 300W 175MHz 28V
$265.91 -
MRF141 Motorola Transistor RF Power FET 150W 175MHz 28V (NOS)
$79.91 -
MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V
$69.91 As low as: $64.95Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.
- Guaranteed performance at 30 MHz, 28V: Output power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40%
- Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB
- Low thermal resistance
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF141-MA -
MRF140 Motorola Transistor 150W 28V 150 MHz Matched Pair (2) (NOS)
$289.91Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
- Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
- Superior high order IMD
- IMD(d3) (150 W PEP): –30 dB (Typ.)
- IMD(d11) (150 W PEP): –60 dB (Typ.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF140-MP-MOTMade in the USA