RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
For output stage of high power amplifiers in HF Band mobile radio sets.
RD00HHS1-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
|Made in the USA||N/A|