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RD100HHF1 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100 watt 12.5v

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RD100HHF1 Mitsubishi Silicon MOSFET Power Transistor 30MHz 100 watt 30 MHz 12.5v

MFR: Mitsubishi, Japan

(MFR #: RD100HHF1-101)

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RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

  • High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band.
  • For output stage of high power amplifiers in HF Band mobile radio sets.
  • RD100HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking.

MFR: Mitsubishi, Japan


Additional Information

Featured Product No
Made in the USA No
Manufacturer Mitsubishi
Manufacturer Name Mitsubishi

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