RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
- High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band.
- For output stage of high power amplifiers in HF Band mobile radio sets.
- RD100HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking.
MFR: Mitsubishi, Japan
|Made in the USA||No|