Details
1SS177 Toshiba Silicon Epitaxial Planar Type Diode (NOS)
- For ultra high speed switching application
- High Power Dissipation: P = 300mw (Max.)
- Fast Reverse Recovery Time: trr = 1.4 (Typical)
- Small Total Capacitance: CT = 0.9pF (Typical)
New Old Stock * No longer available for export
MFR: Toshiba Corporation
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Toshiba Corporation |
