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2N3375 MEV Silicon NPN RF Power Transistor 250MHz (NOS)

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$12.90
In Stock
OR

 Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHF-UHF Region.



  • Maximum Collector Power Dissipation (Pc): 12 W

  • Maximum Collector-Base Voltage |Vcb|: 65 V


MFR: MEV
Made in Russia

SKU: 2N3375-MEV

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Details

2N3375 MEV Silicon NPN RF Power Transistor 250MHz (NOS)

 Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHF-UHF Region.

  • Maximum Collector Power Dissipation (Pc): 12 W
  • Maximum Collector-Base Voltage |Vcb|: 65 V
  • Maximum Collector-Emitter Voltage |Vce|: 40 V
  • Maximum Emitter-Base Voltage |Veb|: 4 V
  • Maximum Collector Current |Ic max|: 1.5 A
  • Max. Operating Junction Temperature (Tj): 200 °C
  • Transition Frequency (ft): 250 MHz
  • Collector Capacitance (Cc): 10 pF
  • Forward Current Transfer Ratio (hFE), MIN: 10
MFR: MEV
Made in Russia

 

Additional Information

Featured Product No
Made in the USA No
GTIN No
ISBN No
NATO Stock Number No
Manufacturer Part Number No
Manufacturer MEV
Condition New
NOS Yes
Call For Price No
Manufacturer Name MEV

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