Details
2N5885G On Semiconductor® Bipolar Single NPN Transistor 60v 25a 200w
Designed for general−purpose power amplifier and switching applications.
- Current - Collector (Ic) (Max): 25 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
- Current - Collector Cutoff (Max): 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
- Power - Max: 200 W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
New Old Stock * No longer available for export
MFR: ON Semiconductor®
Rohs Compliant
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | ON SEMI |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | FUTURE ELECTRONICS CORP |
