Details
2SB649 Hitachi Silicon PNP Epitaxial Transistor (NOS)
- Type: PNP
- Collector-Emitter Voltage, max: -120 V
- Collector-Base Voltage, max: -180 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1.5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 60 to 320
- Transition Frequency, min: 140 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
- Complementary Pair with 2SD669/A
New Old Stock * No longer available for export
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | HItachi |