Details
2SC1061 Hitachi Silicon NPN Power Transistors
- Complement to type 2SA671
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 25 W
- Maximum Collector-Base Voltage |Vcb|: 50 V
- Maximum Collector-Emitter Voltage |Vce|: 50 V
- Maximum Emitter-Base Voltage |Veb|: 4 V
- Maximum Collector Current |Ic max|: 3 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 3 MHz
- Forward Current Transfer Ratio (hFE), MIN: 80
- Package: TO218
New Old Stock * No longer available for export
MFR: Hitachi
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | HItachi |
