Details
2SC2705 Toshiba Transistor Silicon NPN Transistor (NOS)
- Mounting Style: Through Hole
- Transistor Polarity: NPN
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 150 V
- Collector- Base Voltage VCBO: 150 V
- Emitter- Base Voltage VEBO: 5 V
- Collector-Emitter Saturation Voltage: 1.5 V
- Maximum DC Collector Current: 50 mA
- Pd - Power Dissipation: 800 mW
- Gain Bandwidth Product fT: 200 MHz
- Maximum Operating Temperature: + 150 C
- Series: 2SC2705
- Continuous Collector Current: 50 mA
- DC Collector/Base Gain hfe Min: 80
- DC Current Gain hFE Max: 240
- Product Type: BJTs - Bipolar Transistors
New Old Stock * No longer available for export
MFR: Toshiba
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | Yes |
| Call For Price | No |
| Manufacturer Name | Toshiba Electronics |
