Details
2SC2879 Toshiba Transistor Silicon NPN Epitaxial Planar Type, Early Version (Pull)
2-30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. (LOW SUPPLY VOLTAGE USE)
These transistors were pulled from working equipment and were scoped/tested and meet specifications
- Specified 12.5V, 28MHz Characteristics
- Output Power : Po=100WPEP
- Power Gain : Gp=13dB
- Collector Efficiency : '7 C = 35% (Min.)
- Intermodulation Distortion : IMD= -24dB(Max.)
(MIL Standard)
Used * No longer available for export
MFR: Toshiba
Made in Japan
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | Yes |
| Call For Price | No |
| Manufacturer Name | TOSHIBA AMERICA ELECTRONICS COMPONENTS |