2SC3356 Transistor, MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristics.
• Low Noise and High Gain
NF = 1.1 dB TYP., G a = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
NOTE: For more info on 2SC3356 you can see data sheet attached.
Limited Quantity Available, New Old Stock, Not for Export
|Made in the USA||No|
|Call For Price||N/A|
|Manufacturer Name||SHOYO CORP|