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2SC3356 Transistor, NEC

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 2SC3356 Transistor, MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR, MFR: NEC  No longer available for Export, (NOS)


 


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Details

2SC3356 Transistor, MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION

The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristics.

FEATURES

• Low Noise and High Gain

                    NF = 1.1 dB TYP., G a = 11 dB TYP. @VCE = 10 V, I= 7 mA, f = 1.0 GHz

• High Power Gain

                      MAG = 13 dB TYP. @VCE = 10 V, I= 20 mA, f = 1.0 GHz

MFR: NEC

NOTE: For more info on 2SC3356 you can see data sheet attached.

Limited Quantity Available, New Old Stock, Not for Export

 

 

 

 

 

Additional Information

Featured Product No
Made in the USA No
Manufacturer NEC
NOS N/A
Call For Price N/A
Manufacturer Name SHOYO CORP

Product Attachments

2SC3356 pdf 104.16 KB Download

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