Details
2SC3419Y Toshiba NPN Epitaxial Transistor (NOS)
- Low Saturation Voltage: Vce (sat) = 0.25v (typ.) (Ic=500mA, Ib = 50mA)
- High Collector Power Dissaption: Pc=1.2w (Ta=25°C)
- Complementary to 2SA1356
New Old Stock * Not for Export
MFR: Toshiba
Additional Information
Featured Product | No |
---|---|
Made in the USA | No |
GTIN | No |
ISBN | No |
NATO Stock Number | No |
Manufacturer Part Number | No |
Manufacturer | Toshiba |
Condition | New |
NOS | No |
Call For Price | No |
Manufacturer Name | No |