Details
2SC3907 Toshiba NPN Planar Silicon Transistor (NOS)
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 130 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 180 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 280 pF
Forward Current Transfer Ratio (hFE), MIN: 55
New Old Stock
MFR: Toshiba
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | No |
