Details
2SC458 Hitachi Silicon NPN Epitaxial Transistor (NOS)
For low frequency amplifier. Complement to 2SA1029
- Type: NPN
- Collector-Emitter Voltage, max: 30 V
- Collector-Base Voltage, max: 30 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.1 A
- Collector Dissipation: 0.2 W
- DC Current Gain (hfe): 100 to 500
- Transition Frequency, min: 230 MHz
- Noise Figure, max: 3 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
New Old Stock * No longer available for export
MFR: Hitachi
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | No |