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2SC495 Silicon NPN Epitaxial Transistor

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2SC495 Transistor, Silicon NPN Epitaxial Transistor   No longer available for Export, (NOS)


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Details

2SC495 Transistor, Silicon NPN Epitaxial Transistor

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.55 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO126

Limited Quantity Available, New Old Stock, Not for Export

Additional Information

Featured Product No
Made in the USA No
Manufacturer Toshiba

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