Details
2SC790 Toshiba Silicon NPN Power Transistor (NOS)
- Polarity: NPN
- Maximum Collector Power Dissipation: 25 W
- Maximum Collector-Base Voltage: 50 V
- Maximum Collector-Emitter Voltage: 40 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 3 A
- Max. Operating Junction Temperature: 150 °C
- Transition Frequency: 3 MHz
- Collector Capacitance: 140 pF
- Forward Current Transfer Ratio: 40
New Old Stock * No longer available for export
MFR: Toshiba
Additional Information
Featured Product | No |
---|---|
Made in the USA | No |
GTIN | No |
ISBN | No |
NATO Stock Number | No |
Manufacturer Part Number | No |
Manufacturer | No |
Condition | New |
NOS | No |
Call For Price | No |
Manufacturer Name | Toshiba Electronics |