Details
2SJ106 Toshiba Field Effect Transistor Silicon P-Channel Junction Type (NOS)
For Audio Frequency Amplifier applications, Analog Switch applications, Constant Current applications, and Impedance Converter applications.
- High Breakdown Voltage: VGDS=50V
- High Input Impedance: IGSS=1.0nA (MAX) (VGS=30V)
- Low RDS (ON)
- Small Package
- Maximum Ratings (Ta-25°C)
New Old Stock
MFR: Toshiba Electronics
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | Yes |
| Call For Price | No |
| Manufacturer Name | Toshiba Electronics |
Product Attachments
| 2SJ106 |  196.24 KB |
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