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2SK210GR Toshiba Field Effect Transistor, Silicon N Channel Junction Type

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$2.91
In Stock
OR

Field Effect Transistor, Silicon N Channel Junction Type


MFR: Toshiba


SKU: 2SK210GR


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Details

2SK210GR  Toshiba Field Effect Transistor, Silicon N Channel Junction Type

  • FM Tuner Applications
  • VHF Band Amplifier Application
  • High power gain: GPS= 24dB (typ.) (f = 100 MHz)
  • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)
  • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
Note: IDSS classificatopn Y: 3.0~7.0 mA, GR (R): 6.0~14.0 mA, BL (L): 12.0~24.0 mA
MFR: Toshiba
(NOS), Not available for Export
See Data Sheet for additional specifications

Additional Information

Featured Product No
Made in the USA No
GTIN No
ISBN No
NATO Stock Number No
Manufacturer Part Number No
Manufacturer No
Condition New
NOS No
Call For Price No
Manufacturer Name SHOYO CORP

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