Details
2SK2973 Mitsubishi Silicon MOSFET Transistor
Mosfet type transistor specifically designed for VHF/UHF power amplifier application.
FEATURES
- High Power Gain: Gpe >13dB @VDD=9.6v, F=450 MHz, Pin=17dBm
- High Efficiency: 55% typ.
- Source case type SOT-89 package (connected internally to source)
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets.
MFR: Mitsubishi
Additional Information
Featured Product | No |
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Made in the USA | No |
GTIN | N/A |
ISBN | N/A |
NATO Stock Number | N/A |
Manufacturer Part Number | N/A |
Manufacturer | Mitsubishi |
Condition | New |
NOS | No |
Call For Price | No |
Manufacturer Name | MITSUBISHI ELECTRIC US, INC. |