Details
2SK3475 Toshiba Mosfet Transistor Field Effect Silicon N Channel MOS Type
VHF- and UHF-band Amplifier Applications
Output power: PO = 630 mW (min)
Gain: GP = 14.9dB (min)
Drain efficiency: ηD = 45% (min)
New Old Stock * No longer available for export
MFR: Toshiba
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | N/A |
| ISBN | N/A |
| NATO Stock Number | N/A |
| Manufacturer Part Number | N/A |
| Manufacturer | Toshiba |
| Condition | New |
| NOS | Yes |
| Call For Price | No |
| Manufacturer Name | TOSHIBA AMERICA ELECTRONICS COMPONENTS |
Product Attachments
| 2SK3475 |  111.91 KB |
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