Details
2SK3656 Toshiba Filed Effect Transistor Silicon N Channel MOS Type NOS)
For VHF-and UHF-band Amplifier Applications. Intended for high frequency Power Amplifier equipment.
- Output power: PO =28.4dBmW (typ)
- Gain: GP = 15.4dB (typ)
- Drain efficiency: ηD = 64% (typ)
New Old Stock * No longer available for export
MFR: Toshiba
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | Yes |
| Call For Price | No |
| Manufacturer Name | Toshiba Electronics |
