Details
3SK113 MOSFET Transistor (NOS)
- Type Designator: 3SK113
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Pdⓘ - Maximum Power Dissipation: 0.2 W
- |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
- |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
- |Id|ⓘ - Maximum Drain Current: 0.08 A
- Tjⓘ - Maximum Junction Temperature: 125 °C
- Rdsⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
- Package: TO131
New Old Stock * No longer available for export
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | No |
