Details
3SK88 NEC Dual Gate Mosfet Transistor (NOS)
- Drain Current-Max (ID): 0.025 A
- Feedback Cap-Max (Crss): 0.03 pF
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
- JESD-30 Code: O-PRDB-F4
- Number of Elements: 1.0
- Number of Terminals: 4
- Operating Mode: DUAL GATE, DEPLETION MODE
- Operating Temperature-Max: 125.0 Cel
- Package Body Material: PLASTIC/EPOXY
- Package Shape: ROUND
- Package Style: DISK BUTTON
- Polarity/Channel Type: N-CHANNEL
- Power Gain-Min (Gp): 14.0dB
- Surface Mount: YES
- Terminal Form: FLAT
- Terminal Position: RADIAL
- Transistor Application: AMPLIFIER
- Transistor Element Material: SILICON
MFR: NEC Corporation
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | NEC |
| Condition | New |
| NOS | Yes |
| Call For Price | No |
| Manufacturer Name | NEC |
