ATF-13736-TR1 Agilent Low Noise and High Dynamic GaAs-FET (NOS)
In Stock
$2.90
- Associated gain (Ga): 9 dB
- Power dissipation: 225 mW
New Old Stock * No longer available for export
MFR: Agilent Technologies
SKU: ATF13736TR1
Details
ATF-13736-TR1 Agilent Low Noise and High Dynamic GaAs-FET (NOS)
- Drain-source voltage (Vds): 5 V
- Gate-source voltage (Vgs) : -4 V
- Drain current (Id): 50 mA
- Associated gain (Ga): 9 dB
- Power dissipation: 225 mW
- Max. frequency: 16 GHz
- Package: micro-X
- Mounting: SMD
New Old Stock * No longer available for export
MFR: Agilent Technologies
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Agilent Technologies |
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