BF966S Vishay N Channel Dual Gate MOS - Field Effect Triode Depletion Mode Transistor (NOS)

BF966S Vishay N Channel Dual Gate MOS - Field Effect Triode Depletion Mode Transistor (NOS)

• EU RoHS: Compliant
• ECCN (US): EAR99
• Part Status: Obsolete
• HTS: 8541.21.00.95
• Configuration: Single Dual Gate
• Channel Mode: Depletion
• Channel Type: N
• Number of Elements per Chip: 1
• Maximum Drain Source Voltage (V): 20
• Maximum Gate Source Voltage (V): ±8
• Maximum Continuous Drain Current (A): 0.03
• Typical Input Capacitance @ Vds (pF): 2.2@15V @ Gate 1|1.1@15V @ Gate 2
• Typical Reverse Transfer Capacitance @ Vds (pF): 0.025 @ 15V
• Typical Output Capacitance @ Vds (pF): 0.8 @ 15V
• Typical Forward Transconductance (S): 0.0185
• Maximum Power Dissipation (mW): 200
• Typical Power Gain (dB): 25
• Minimum Operating Temperature (°C): -55
• Maximum Operating Temperature (°C): 150
• Mounting: Surface Mount
• PCB changed: 4
• Supplier Package: TO-50
• Pin Count: 4

New Old Stock * No longer available for export
MFR: Vishay