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F2012 Polyfet Silicon Gate RF Power VDMOS Transistor 10 Watts Single Ended 28 Volts 10dB Gain 1 GHz (NOS)

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$35.91
In Stock
OR

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


MFR: Polyfet
New Old Stock * No longer available for export
Matched Pairs available upon request.
SKU: F2012



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Details

F2012 Polyfet Silicon Gate RF Power VDMOS Transistor 10 Watts Single Ended 28 Volts 10dB Gain 1 GHz (NOS)

MFR: Polyfet
New Old Stock * No longer available for export
Matched Pairs available upon request.
NOTE: See Data Sheet for more info.

Additional Information

Featured Product No
Made in the USA No
Manufacturer Polyfet
NOS No
Call For Price No
Manufacturer Name Polyfet

Product Attachments

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