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  • F2012 Polyfet Silicon Gate RF Power VDMOS Transistor 10 Watts Single Ended 28 Volts 10dB Gain 1 GHz (NOS)

F2012 Polyfet Silicon Gate RF Power VDMOS Transistor 10 Watts Single Ended 28 Volts 10dB Gain 1 GHz (NOS)

F2012 Polyfet Silicon Gate RF Power VDMOS Transistor 10 Watts Single Ended 28 Volts 10dB Gain 1 GHz (NOS)
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$35.91
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Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


MFR: Polyfet
New Old Stock * No longer available for export
Matched Pairs available upon request.
SKU: F2012


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Details

F2012 Polyfet Silicon Gate RF Power VDMOS Transistor 10 Watts Single Ended 28 Volts 10dB Gain 1 GHz (NOS)

MFR: Polyfet
New Old Stock * No longer available for export
Matched Pairs available upon request.
NOTE: See Data Sheet for more info.

Additional Information

Featured Product No
Made in the USA No
GTIN N/A
ISBN N/A
NATO Stock Number N/A
Manufacturer Part Number N/A
Manufacturer Polyfet
Condition New
NOS No
Call For Price No
Manufacturer Name Polyfet

Product Attachments

f2012 pdf 37.56 KB Download

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RF Parts Company
435 S PACIFIC ST
SAN MARCOS, CA, 92078, USA

1-800-RFPARTS (1-800-737-2787)  1-760-744-0700, #1

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