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RA30H4452M1 Mitsubishi MOS FET RF Module 440-520 MHz 30 Watt,12.5v

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$39.95
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RD100HHF1C Mitsubishi MOS FET Power Transistor 30MHz 100W


MFR: Mitsubishi, Japan


 



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Details

RA30H4452M1 Mistubishi MOS FET, RF Module 440-520 MHz 30 Watt 12.5v Metal Cap

The RA30H4452M1 is a 30-watt RF MOS FET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout =30W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum). The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum). This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power

Frequency Range: 440-520 MHz
Vdd: 12.5 V
Power Output:
 30W

Efficiency: 40%
Power Input: 50mW
Case: H2M

MFR: Mitsubishi, Japan

MFR Part #: RA30H4452M1-501

Additional Information

Featured Product No
Made in the USA No
Manufacturer No
Manufacturer Name Mitsubishi

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