MPSH10 National Semiconductor Bipolar RF Transistor (NOS)
$0.24
In Stock
- Maximum DC Collector Current: 50 mA
- Pd - Power Dissipation: 350 W
- Gain Bandwidth Product fT: 650 MHz
New Old Stock * No longer available for export
MFR: National Semiconductor
SKU: MPSH10
Details
MPSH10 National Semiconductor Transistor (NOS)
- Mounting Style: Through Hole
- Package / Case: TO-92-3
- Transistor Polarity: NPN
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 25 V
- Collector- Base Voltage VCBO: 30 V
- Emitter- Base Voltage VEBO: 3 V
- Collector-Emitter Saturation Voltage: 500 mV
- Maximum DC Collector Current: 50 mA
- Pd - Power Dissipation: 350 W
- Gain Bandwidth Product fT: 650 MHz
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 150 C
- Continuous Collector Current: 450 mA
- DC Collector/Base Gain hfe Min: 60
- Product Type: BJTs - Bipolar Transistors
- Technology: Si
New Old Stock * No longer available for export
MFR: National Semiconductor
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | National Semiconductor |
| Condition | New |
| NOS | Yes |
| Call For Price | No |
| Manufacturer Name | National Semiconductor |
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