MRF141G M/A-COM RF Power FET 300W 175MHz 28V

MRF141G M/A-COM RF Power FET 300W 175MHz 28V

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high  gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency  band solid state transmitters and amplifiers.

• Ruggedness tested at rated output power
• Nitride passivated die for enhanced reliability
• Transistor Polarity: N - Channel
• Technology: Silicon
• Id - Continuous Drain Current: 32 A
• Vds - Drain-Source Breakdown Voltage: 65 V
• Operating Frequency: 175 MHz
• Gain: 12 Db
• Output Power: 300 W
• Configuration: Dual
• Pd - Power Dissipation: 500 W
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Mounting Style: Smd/Smt
• Package / Case: CASE 375 - 04
• Vgs - Gate-Source Voltage: 40 V
• Gate-Source Breakdown Voltage: +/- 40 V
• Product Type: Rf Mosfet Transistors
• Vgs Th - Gate-Source Threshold Voltage: 3 V

MFR: MA/COM