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MRF141G-MA Transistor, RF Power FET, 300W, 175MHz, 28V, M/A-COM

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MRF141G Transistor, RF Power FET, 300W, 175MHz, 28V, MFR: M/A-COM


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Details

MRF141G RF Power FET, 300W, 175MHz, 28V, M/A-COM

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high  gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency  band solid state transmitters and amplifiers.
• Guaranteed performance at 30 MHz, 28V:  Output power: 150W  Gain: 8dB (22dB Typ.)  Efficiency: 40%
• Typical Performance at 175MHz, 50V:  Output Power: 150 W  Gain: 13 dB
• Low thermal resistance
• Ruggedness tested at rated output power
• Nitride passivated die for enhanced reliability

 

Additional Information

Featured Product Yes
Made in the USA No
Manufacturer No

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