Details
MRF150 RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4) M/A-COM
TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase angles
Applications
- Aerospace and Defense
- ISM
Limited Quantity Available New Old Stock Not for Export
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| Manufacturer | M/A-COM |
| Manufacturer Name | FUTURE ELECTRONICS CORP |
Product Attachments
| MRF150 |  279.97 KB |
Download |