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MRF151A Transistor, RF Power Field-Effect Transistor 150W, 50V, 175MHz, N-Channel Broadband MOSFET, M/A-COM

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MRF151A RF Power Field-Effect Transistor  150W, 50V, 175MHz N-Channel Broadband MOSFET,  MFG: M/A-COM  No longer available for Export, (NOS)

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MRF151A RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET,  MFR: M/A-COM

• Enhanced thermal performance
• Higher power dissipation  Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%  Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability

Description and Applications
Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

Limited Quantity Available, New Old Stock, Not for Export

Additional Information

Featured Product No
Made in the USA No
Manufacturer No
Manufacturer Name FIRST SOURCE INC.

Product Attachments

MRF151A pdf 345.55 KB Download

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