MRF5003 Motorola RF Power Field Effect Transistor RF MOSFET N–Channel Enhancement–Mode 512 MHz 7.5V 3.0W (NOS)

MRF5003 Motorola RF Power Field Effect Transistor RF MOSFET N–Channel Enhancement–Mode 512 MHz 7.5V 3.0W

Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equipment.

• Guaranteed Performance at 512 MHz, 7.5 Volts: Output Power = 3.0 Watts, Power Gain = 9.5 dB, Efficiency = 45%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• All Gold Metal for Ultra Reliability
• Capable of Handling 20:1 VSWR, at 15.5 Vdc, 512 MHz, 2.0 dB Overdrive
• Suitable for 12.5 Volt Applications
• True Surface Mount Package

New Old Stock * No longer available for export
MFR: Motorola