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MRF544 APT NPN Silicon RF and Microwave Discrete Low Power Transistor (NOS)

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Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.



  • Silicon NPN, high Frequency, high breakdown Transistor

  • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz

  • High Collector Base Breakdown Voltage - BVCBO = 100 V (min)

  • High FT - 1400 MHz


New Old Stock * No longer available for export
MFR: APT


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Details

MRF544 APT NPN Silicon RF and Microwave Discrete Low Power Transistor (NOS)

Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.

  • Silicon NPN, high Frequency, high breakdown Transistor
  • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz
  • High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
  • High FT - 1400 MHz

New Old Stock * No longer available for export
MFR: APT

Additional Information

Featured Product No
Made in the USA No
GTIN N/A
ISBN N/A
NATO Stock Number N/A
Manufacturer Part Number N/A
Manufacturer Advanced Power Technology
Condition New
NOS No
Call For Price No
Manufacturer Name Advanced Power Technology RF

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