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MRF553 Microsemi RF and Microwave Discrete Low Power Transistor 1.5 W 175 MHz 12.5 V (NOS)

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Designed primarily for wideband large signal stages in the VHF frequency range.



  • Specified @ 12.5 V, 175 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 11.5 dB, Efficiency 60% (Typ)

  • Cost Effective PowerMacro Package

  • Electroless Tin Plated Leads for Improved Solderability


No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
MFR: MRF553-MSC


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Details

MRF553 Microsemi RF and Microwave Discrete Low Power Transistor 1.5 W 175 MHz 12.5 V (NOS)

Designed primarily for wideband large signal stages in the VHF frequency range.

  • Specified @ 12.5 V, 175 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 11.5 dB, Efficiency 60% (Typ)
  • Cost Effective PowerMacro Package
  • Electroless Tin Plated Leads for Improved Solderability

No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi

Additional Information

Featured Product No
Made in the USA No
GTIN No
ISBN No
NATO Stock Number No
Manufacturer Part Number No
Manufacturer Microsemi
Condition New
NOS No
Call For Price No
Manufacturer Name AVNET ELECTRONICS

Product Attachments

MRF553-MSC pdf 233.27 KB Download

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